000133812 001__ 133812
000133812 005__ 20240610120406.0
000133812 0247_ $$2doi$$a10.1016/j.mee.2013.03.066
000133812 0247_ $$2ISSN$$a0167-9317
000133812 0247_ $$2ISSN$$a1873-5568
000133812 0247_ $$2WOS$$aWOS:000321229200031
000133812 037__ $$aFZJ-2013-02206
000133812 082__ $$a620
000133812 1001_ $$0P:(DE-Juel1)128618$$aNichau, Alexander$$b0$$eCorresponding author$$ufzj
000133812 245__ $$aReduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si
000133812 260__ $$a[S.l.] @$$bElsevier$$c2013
000133812 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1386859424_20645
000133812 3367_ $$2DataCite$$aOutput Types/Journal article
000133812 3367_ $$00$$2EndNote$$aJournal Article
000133812 3367_ $$2BibTeX$$aARTICLE
000133812 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000133812 3367_ $$2DRIVER$$aarticle
000133812 500__ $$3POF3_Assignment on 2016-02-29
000133812 520__ $$aThe continued device scaling demands the reduction of the equivalent oxide thickness (EOT) below 1 nm. For HfO2-based gate stacks, the interfacial SiO2 limits the EOT scaling. A low EOT can only be achieved if the interfacial layer (IL) is reduced to its physical limit of ∼4 Å. Such thin EOT are achievable if redox reactions within the gate stack are employed in order to reduce SiO2. This study reports on the use of an Al layer in combination with a TiN metal electrode to reduce the IL and achieve lowest EOT values. The lowest EOT achieved was 4.6 Å. However, the scavenging process was found to strongly depend on the thermal budget after Al deposition. The presented process adapts a standard metal-inserted poly-Si flow (MIPS) prior to Al deposition, but may also be an option to control IL regrowth.
000133812 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000133812 536__ $$0G:(DE-HGF)POF2-42G41$$a42G - Peter Grünberg-Centre (PG-C) (POF2-42G41)$$cPOF2-42G41$$fPOF II$$x1
000133812 588__ $$aDataset connected to
000133812 7001_ $$0P:(DE-Juel1)144017$$aSchäfer, Anna$$b1
000133812 7001_ $$0P:(DE-Juel1)162211$$aKnoll, Lars$$b2$$ufzj
000133812 7001_ $$0P:(DE-Juel1)138778$$aWirths, Stephan$$b3$$ufzj
000133812 7001_ $$0P:(DE-HGF)0$$aSchram, T.$$b4
000133812 7001_ $$0P:(DE-HGF)0$$aRagnarsson, L.-Å.$$b5
000133812 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b6
000133812 7001_ $$0P:(DE-Juel1)138772$$aBernardy, Patric$$b7$$ufzj
000133812 7001_ $$0P:(DE-Juel1)130811$$aLuysberg, Martina$$b8$$ufzj
000133812 7001_ $$0P:(DE-Juel1)133839$$aBesmehn, Astrid$$b9$$ufzj
000133812 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b10
000133812 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b11$$ufzj
000133812 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b12$$ufzj
000133812 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2013.03.066$$p109 - 112$$tMicroelectronic engineering$$v109
000133812 8564_ $$uhttps://juser.fz-juelich.de/record/133812/files/FZJ-2013-02206.pdf$$yRestricted
000133812 909__ $$ooai:juser.fz-juelich.de:133812$$pVDB
000133812 909CO $$ooai:juser.fz-juelich.de:133812$$pVDB
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128618$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144017$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)162211$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)138778$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128631$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)138772$$aForschungszentrum Jülich GmbH$$b7$$kFZJ
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130811$$aForschungszentrum Jülich GmbH$$b8$$kFZJ
000133812 9101_ $$0I:(DE-Juel1)ZEA-3-20090406$$6P:(DE-Juel1)133839$$aAnalytik$$b9$$kZEA-3
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)133839$$aForschungszentrum Jülich GmbH$$b9$$kFZJ
000133812 9101_ $$0I:(DE-Juel1)ZEA-3-20090406$$6P:(DE-Juel1)133840$$aAnalytik$$b10$$kZEA-3
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)133840$$aForschungszentrum Jülich GmbH$$b10$$kFZJ
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich GmbH$$b11$$kFZJ
000133812 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich GmbH$$b12$$kFZJ
000133812 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000133812 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000133812 9131_ $$0G:(DE-HGF)POF2-42G41$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vPeter Grünberg-Centre (PG-C)$$x1
000133812 9141_ $$y2013
000133812 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000133812 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000133812 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000133812 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000133812 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000133812 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000133812 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000133812 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000133812 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000133812 915__ $$0StatID:(DE-HGF)1030$$2StatID$$aDBCoverage$$bCurrent Contents - Life Sciences
000133812 920__ $$lyes
000133812 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000133812 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x1
000133812 9201_ $$0I:(DE-Juel1)ZEA-3-20090406$$kZEA-3$$lAnalytik$$x2
000133812 980__ $$ajournal
000133812 980__ $$aVDB
000133812 980__ $$aUNRESTRICTED
000133812 980__ $$aI:(DE-Juel1)PGI-9-20110106
000133812 980__ $$aI:(DE-Juel1)PGI-5-20110106
000133812 980__ $$aI:(DE-Juel1)ZEA-3-20090406
000133812 981__ $$aI:(DE-Juel1)ER-C-1-20170209
000133812 981__ $$aI:(DE-Juel1)PGI-5-20110106
000133812 981__ $$aI:(DE-Juel1)ZEA-3-20090406