TY  - JOUR
AU  - Nichau, Alexander
AU  - Schäfer, Anna
AU  - Knoll, Lars
AU  - Wirths, Stephan
AU  - Schram, T.
AU  - Ragnarsson, L.-Å.
AU  - Schubert, Jürgen
AU  - Bernardy, Patric
AU  - Luysberg, Martina
AU  - Besmehn, Astrid
AU  - Breuer, Uwe
AU  - Buca, Dan Mihai
AU  - Mantl, Siegfried
TI  - Reduction of silicon dioxide interfacial layer to 4.6 A EOT by Al remote scavenging in high K/metal gate stacks on Si
JO  - Microelectronic engineering
VL  - 109
CY  - [S.l.] @
PB  - Elsevier
M1  - FZJ-2013-02206
SP  - 109 - 112
PY  - 2013
AB  - The continued device scaling demands the reduction of the equivalent oxide thickness (EOT) below 1 nm. For HfO2-based gate stacks, the interfacial SiO2 limits the EOT scaling. A low EOT can only be achieved if the interfacial layer (IL) is reduced to its physical limit of ∼4 Å. Such thin EOT are achievable if redox reactions within the gate stack are employed in order to reduce SiO2. This study reports on the use of an Al layer in combination with a TiN metal electrode to reduce the IL and achieve lowest EOT values. The lowest EOT achieved was 4.6 Å. However, the scavenging process was found to strongly depend on the thermal budget after Al deposition. The presented process adapts a standard metal-inserted poly-Si flow (MIPS) prior to Al deposition, but may also be an option to control IL regrowth.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000321229200031
DO  - DOI:10.1016/j.mee.2013.03.066
UR  - https://juser.fz-juelich.de/record/133812
ER  -