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@ARTICLE{Nichau:133812,
      author       = {Nichau, Alexander and Schäfer, Anna and Knoll, Lars and
                      Wirths, Stephan and Schram, T. and Ragnarsson, L.-Å. and
                      Schubert, Jürgen and Bernardy, Patric and Luysberg, Martina
                      and Besmehn, Astrid and Breuer, Uwe and Buca, Dan Mihai and
                      Mantl, Siegfried},
      title        = {{R}eduction of silicon dioxide interfacial layer to 4.6 {A}
                      {EOT} by {A}l remote scavenging in high {K}/metal gate
                      stacks on {S}i},
      journal      = {Microelectronic engineering},
      volume       = {109},
      address      = {[S.l.] @},
      publisher    = {Elsevier},
      reportid     = {FZJ-2013-02206},
      pages        = {109 - 112},
      year         = {2013},
      abstract     = {The continued device scaling demands the reduction of the
                      equivalent oxide thickness (EOT) below 1 nm. For HfO2-based
                      gate stacks, the interfacial SiO2 limits the EOT scaling. A
                      low EOT can only be achieved if the interfacial layer (IL)
                      is reduced to its physical limit of ∼4 Å. Such thin EOT
                      are achievable if redox reactions within the gate stack are
                      employed in order to reduce SiO2. This study reports on the
                      use of an Al layer in combination with a TiN metal electrode
                      to reduce the IL and achieve lowest EOT values. The lowest
                      EOT achieved was 4.6 Å. However, the scavenging process was
                      found to strongly depend on the thermal budget after Al
                      deposition. The presented process adapts a standard
                      metal-inserted poly-Si flow (MIPS) prior to Al deposition,
                      but may also be an option to control IL regrowth.},
      cin          = {PGI-9 / PGI-5 / ZEA-3},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-5-20110106 /
                      I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421) /
                      42G - Peter Grünberg-Centre (PG-C) (POF2-42G41)},
      pid          = {G:(DE-HGF)POF2-421 / G:(DE-HGF)POF2-42G41},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000321229200031},
      doi          = {10.1016/j.mee.2013.03.066},
      url          = {https://juser.fz-juelich.de/record/133812},
}