000133963 001__ 133963
000133963 005__ 20240619091055.0
000133963 0247_ $$2doi$$a10.1063/1.4802676
000133963 0247_ $$2ISSN$$a0021-8979
000133963 0247_ $$2ISSN$$a1089-7550
000133963 0247_ $$2WOS$$aWOS:000318550300047
000133963 0247_ $$2Handle$$a2128/16819
000133963 037__ $$aFZJ-2013-02345
000133963 082__ $$a530
000133963 1001_ $$0P:(DE-Juel1)128749$$aWördenweber, Roger$$b0$$eCorresponding author
000133963 245__ $$aRelaxor ferro- and paraelectricity in anisotropically strained SrTiO3 films
000133963 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
000133963 3367_ $$2DRIVER$$aarticle
000133963 3367_ $$2DataCite$$aOutput Types/Journal article
000133963 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1368687388_7657
000133963 3367_ $$2BibTeX$$aARTICLE
000133963 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000133963 3367_ $$00$$2EndNote$$aJournal Article
000133963 500__ $$3POF3_Assignment on 2016-02-29
000133963 520__ $$aThe ferroelectric properties of anisotropically strained SrTiO3 films are analyzed by detailed measurements of the complex dielectric constant as function of temperature, frequency, bias voltage and electric field direction. At low temperatures, strain induces a relaxor-ferroelectric phase that persists up to room temperature. The transition temperature and characteristic parameters (e.g. Curie temperature, static freezing temperature, degree of diffuseness of the phase transition, activation energy) of the relaxor phase depend strongly on the orientation of the electric field and therefore on the amount of structural strain in the given electric field direction. Also above the ferroelectric transition temperature a relaxation of the permittivity is visible, i.e. the strain causes a relaxor-paraelectric behavior. Only at high enough temperatures the relaxation time constant tends to zero and the ‘classical’ dielectric state is obtained. Frequency and time dependent relaxation experiments demonstrate an extremely large distribution of the relaxation rates in both relaxor states (ferroelectric and paraelectric) which is indicative for the large distribution in the mobility of polar SrTiO3 regions with randomly distributed directions of dipole moments in the film. The large distribution might be taken as an indication for a large distribution in size and orientation of nanosize domains in the anisotropically strained SrTiO3 film.
000133963 536__ $$0G:(DE-HGF)POF2-423$$a423 - Sensorics and bioinspired systems (POF2-423)$$cPOF2-423$$fPOF II$$x0
000133963 536__ $$0G:(DE-HGF)POF2-453$$a453 - Physics of the Cell (POF2-453)$$cPOF2-453$$fPOF II$$x1
000133963 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x2
000133963 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000133963 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b1$$ufzj
000133963 7001_ $$0P:(DE-Juel1)136735$$aEhlig, Tino$$b2
000133963 7001_ $$0P:(DE-Juel1)128687$$aHollmann, Eugen$$b3
000133963 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4802676$$n16$$p164103 -$$tJournal of applied physics$$v113
000133963 8564_ $$uhttps://juser.fz-juelich.de/record/133963/files/FZJ-2013-02345.pdf$$yOpenAccess$$zPublished final document.
000133963 909CO $$ooai:juser.fz-juelich.de:133963$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000133963 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128749$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000133963 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128631$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000133963 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)136735$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000133963 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128687$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000133963 9132_ $$0G:(DE-HGF)POF3-559H$$1G:(DE-HGF)POF3-550$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lBioSoft – Fundamentals for future Technologies in the fields of Soft Matter and Life Sciences$$vAddenda$$x0
000133963 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x1
000133963 9131_ $$0G:(DE-HGF)POF2-423$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vSensorics and bioinspired systems$$x0
000133963 9131_ $$0G:(DE-HGF)POF2-453$$1G:(DE-HGF)POF2-450$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lBioSoft$$vPhysics of the Cell$$x1
000133963 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x2
000133963 9141_ $$y2013
000133963 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000133963 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000133963 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000133963 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000133963 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000133963 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000133963 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000133963 915__ $$0StatID:(DE-HGF)0400$$2StatID$$aAllianz-Lizenz / DFG
000133963 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000133963 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences
000133963 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000133963 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000133963 920__ $$lno
000133963 9201_ $$0I:(DE-Juel1)PGI-8-20110106$$kPGI-8$$lBioelektronik$$x0
000133963 9201_ $$0I:(DE-Juel1)ICS-8-20110106$$kICS-8$$lBioelektronik$$x1
000133963 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x2
000133963 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x3
000133963 9801_ $$aFullTexts
000133963 980__ $$ajournal
000133963 980__ $$aVDB
000133963 980__ $$aUNRESTRICTED
000133963 980__ $$aI:(DE-Juel1)PGI-8-20110106
000133963 980__ $$aI:(DE-Juel1)ICS-8-20110106
000133963 980__ $$aI:(DE-82)080009_20140620
000133963 980__ $$aI:(DE-Juel1)PGI-9-20110106
000133963 981__ $$aI:(DE-Juel1)IBI-3-20200312
000133963 981__ $$aI:(DE-Juel1)ICS-8-20110106
000133963 981__ $$aI:(DE-Juel1)VDB881
000133963 981__ $$aI:(DE-Juel1)PGI-9-20110106