% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Wrdenweber:133963,
author = {Wördenweber, Roger and Schubert, Jürgen and Ehlig, Tino
and Hollmann, Eugen},
title = {{R}elaxor ferro- and paraelectricity in anisotropically
strained {S}r{T}i{O}3 films},
journal = {Journal of applied physics},
volume = {113},
number = {16},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {FZJ-2013-02345},
pages = {164103 -},
year = {2013},
abstract = {The ferroelectric properties of anisotropically strained
SrTiO3 films are analyzed by detailed measurements of the
complex dielectric constant as function of temperature,
frequency, bias voltage and electric field direction. At low
temperatures, strain induces a relaxor-ferroelectric phase
that persists up to room temperature. The transition
temperature and characteristic parameters (e.g. Curie
temperature, static freezing temperature, degree of
diffuseness of the phase transition, activation energy) of
the relaxor phase depend strongly on the orientation of the
electric field and therefore on the amount of structural
strain in the given electric field direction. Also above the
ferroelectric transition temperature a relaxation of the
permittivity is visible, i.e. the strain causes a
relaxor-paraelectric behavior. Only at high enough
temperatures the relaxation time constant tends to zero and
the ‘classical’ dielectric state is obtained. Frequency
and time dependent relaxation experiments demonstrate an
extremely large distribution of the relaxation rates in both
relaxor states (ferroelectric and paraelectric) which is
indicative for the large distribution in the mobility of
polar SrTiO3 regions with randomly distributed directions of
dipole moments in the film. The large distribution might be
taken as an indication for a large distribution in size and
orientation of nanosize domains in the anisotropically
strained SrTiO3 film.},
cin = {PGI-8 / ICS-8 / JARA-FIT / PGI-9},
ddc = {530},
cid = {I:(DE-Juel1)PGI-8-20110106 / I:(DE-Juel1)ICS-8-20110106 /
$I:(DE-82)080009_20140620$ / I:(DE-Juel1)PGI-9-20110106},
pnm = {423 - Sensorics and bioinspired systems (POF2-423) / 453 -
Physics of the Cell (POF2-453) / 421 - Frontiers of charge
based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-423 / G:(DE-HGF)POF2-453 /
G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000318550300047},
doi = {10.1063/1.4802676},
url = {https://juser.fz-juelich.de/record/133963},
}