%0 Journal Article
%A Buß,
%A Rudolph, J.
%A Shvarkov, S.
%A Hardtdegen, Hilde
%A Wieck, A. D.
%A Hägele, D.
%T Long electron spin coherence in ion-implanted GaN: The role of localization
%J Applied physics letters
%V 102
%N 19
%C Melville, NY
%I American Institute of Physics
%M FZJ-2013-02534
%P 192102 -
%D 2013
%X The impact of Ga and Au ion implantation on the electron spin dynamics in bulk wurtzite GaN is  studied by time-resolved Kerr-rotation spectroscopy. The spin relaxation time increases strongly by  up to a factor of 20 for increasing implantation doses. This drastic increase is caused by a transition  from delocalized to localized electrons. We find a characteristic change in the magnetic field  dependence of spin relaxation that can be used as a sensitive probe for the degree of localization.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000320440800042
%R 10.1063/1.4804558
%U https://juser.fz-juelich.de/record/134303