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000134303 1001_ $$0P:(DE-HGF)0$$aBuß,$$b0$$eCorresponding author
000134303 245__ $$aLong electron spin coherence in ion-implanted GaN: The role of localization
000134303 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
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000134303 520__ $$aThe impact of Ga and Au ion implantation on the electron spin dynamics in bulk wurtzite GaN is  studied by time-resolved Kerr-rotation spectroscopy. The spin relaxation time increases strongly by  up to a factor of 20 for increasing implantation doses. This drastic increase is caused by a transition  from delocalized to localized electrons. We find a characteristic change in the magnetic field  dependence of spin relaxation that can be used as a sensitive probe for the degree of localization.
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000134303 7001_ $$0P:(DE-HGF)0$$aRudolph, J.$$b1
000134303 7001_ $$0P:(DE-HGF)0$$aShvarkov, S.$$b2
000134303 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b3$$ufzj
000134303 7001_ $$0P:(DE-HGF)0$$aWieck, A. D.$$b4
000134303 7001_ $$0P:(DE-HGF)0$$aHägele, D.$$b5
000134303 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4804558$$n19$$p192102 -$$tApplied physics letters$$v102
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