TY  - JOUR
AU  - Buß,
AU  - Rudolph, J.
AU  - Shvarkov, S.
AU  - Hardtdegen, Hilde
AU  - Wieck, A. D.
AU  - Hägele, D.
TI  - Long electron spin coherence in ion-implanted GaN: The role of localization
JO  - Applied physics letters
VL  - 102
IS  - 19
CY  - Melville, NY
PB  - American Institute of Physics
M1  - FZJ-2013-02534
SP  - 192102 -
PY  - 2013
AB  - The impact of Ga and Au ion implantation on the electron spin dynamics in bulk wurtzite GaN is  studied by time-resolved Kerr-rotation spectroscopy. The spin relaxation time increases strongly by  up to a factor of 20 for increasing implantation doses. This drastic increase is caused by a transition  from delocalized to localized electrons. We find a characteristic change in the magnetic field  dependence of spin relaxation that can be used as a sensitive probe for the degree of localization.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000320440800042
DO  - DOI:10.1063/1.4804558
UR  - https://juser.fz-juelich.de/record/134303
ER  -