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037 _ _ |a FZJ-2013-02534
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100 1 _ |a Buß,
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245 _ _ |a Long electron spin coherence in ion-implanted GaN: The role of localization
260 _ _ |a Melville, NY
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|b American Institute of Physics
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520 _ _ |a The impact of Ga and Au ion implantation on the electron spin dynamics in bulk wurtzite GaN is studied by time-resolved Kerr-rotation spectroscopy. The spin relaxation time increases strongly by up to a factor of 20 for increasing implantation doses. This drastic increase is caused by a transition from delocalized to localized electrons. We find a characteristic change in the magnetic field dependence of spin relaxation that can be used as a sensitive probe for the degree of localization.
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700 1 _ |a Rudolph, J.
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700 1 _ |a Shvarkov, S.
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700 1 _ |a Hardtdegen, Hilde
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700 1 _ |a Wieck, A. D.
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700 1 _ |a Hägele, D.
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773 _ _ |a 10.1063/1.4804558
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856 4 _ |u https://juser.fz-juelich.de/record/134303/files/FZJ-2013-02534.pdf
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