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| Hauptseite > Publikationsdatenbank > Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing > print |
| Hauptseite > Publikationsdatenbank > Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing > print |
| 001 | 134538 | ||
| 005 | 20210129211700.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4807001 |2 doi |
| 024 | 7 | _ | |a 0021-8979 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2013-02679 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Luong, Gia Vinh |0 P:(DE-Juel1)156277 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing |
| 260 | _ | _ | |a Melville, NY |c 2013 |b American Institute of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 773 | _ | _ | |a 10.1063/1.4807001 |g Vol. 113, no. 20, p. 204902 - |0 PERI:(DE-600)1476463-5 |n 20 |p 204902 |t Journal of applied physics |v 113 |y 2013 |x 0021-8979 |
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