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000135103 1001_ $$0P:(DE-HGF)0$$aGerlach, D.$$b0$$eCorresponding author
000135103 245__ $$aThe silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact
000135103 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2013
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000135103 520__ $$aThe electronic structure of the interface between the boron-doped oxygenated amorphous silicon“window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated usinghard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystallinesilicon (lc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determinedto be (2.8760.27) eV and (3.3760.27) eV, respectively. A lower tunnel junction barrier heightat the lc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface isfound and linked to the higher device performances in cells where a lc-Si:H(B) buffer between thea-Si:H p-i-n absorber stack and the ZnO:Al contact is employed.
000135103 536__ $$0G:(DE-HGF)POF2-111$$a111 - Thin Film Photovoltaics (POF2-111)$$cPOF2-111$$fPOF II$$x0
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000135103 7001_ $$0P:(DE-HGF)0$$aWilks, R. G.$$b1
000135103 7001_ $$0P:(DE-Juel1)130303$$aWippler, D.$$b2
000135103 7001_ $$0P:(DE-HGF)0$$aWimmer, M.$$b3
000135103 7001_ $$0P:(DE-HGF)0$$aLozac'h, M.$$b4
000135103 7001_ $$0P:(DE-HGF)0$$aFélix, R.$$b5
000135103 7001_ $$0P:(DE-Juel1)130272$$aMück, A.$$b6
000135103 7001_ $$0P:(DE-Juel1)130830$$aMeier, Matthias$$b7$$ufzj
000135103 7001_ $$0P:(DE-HGF)0$$aUeda, S.$$b8
000135103 7001_ $$0P:(DE-HGF)0$$aYoshikawa, H.$$b9
000135103 7001_ $$0P:(DE-HGF)0$$aGorgoi, M.$$b10
000135103 7001_ $$0P:(DE-HGF)0$$aLips, K.$$b11
000135103 7001_ $$0P:(DE-HGF)0$$aRech, B.$$b12
000135103 7001_ $$0P:(DE-HGF)0$$aSumiya, M.$$b13
000135103 7001_ $$0P:(DE-Juel1)130252$$aHüpkes, J.$$b14
000135103 7001_ $$0P:(DE-HGF)0$$aKobayashi, K.$$b15
000135103 7001_ $$0P:(DE-HGF)0$$aBär, M.$$b16
000135103 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4813448$$gVol. 103, no. 2, p. 023903 -$$n2$$p023903-1$$tApplied physics letters$$v103$$x0003-6951$$y2013
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