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@ARTICLE{Bretos:135189,
author = {Bretos, Iñigo and Schneller, Theodor and Hennings, Detlev
F. and Park, Daesung and Weirich, Thomas and Paranthaman, P.
and Waser, R.},
title = {{D}ysprosium-{D}oped ({B}a,{S}r){T}i{O} 3 {T}hin {F}ilms on
{N}ickel {F}oilsfor {C}apacitor {A}pplications},
journal = {Journal of the American Ceramic Society},
volume = {96},
number = {4},
issn = {0002-7820},
address = {Oxford [u.a.]},
publisher = {Wiley-Blackwell},
reportid = {FZJ-2013-03154},
pages = {1228 - 1233},
year = {2013},
abstract = {The substitution in (Ba0.70Sr0.30)TiO3 thin films by the
rare-earth element dysprosium prepared at 1000°C by
chemical solution deposition on nickel foils was
investigated. The relatively large thermal budget applied
(via annealing temperature) is shown to enhance the
solubility of the Dy3+doping ion into the crystal lattice of
the perovskite films. Preference for B-site occupancy of
this amphoteric cation was further promoted by the addition
of BaO excess (1 $mol\%),$ which results in slightly larger
grains in the films as observed by scanning electron
microscopy. Despite this Ba-rich composition, the presence
of secondary phases in the thin films was not detected by
X-ray diffraction. Transmission electron microscopy revealed
no evidence for local segregation of Dy at grain boundaries,
neither the formation of NiO at the interface between the
film and the metal foil was observed. The substitution of
Ti4+ by Dy3+ leads to the formation of strong electron
acceptors in the system, which balance the number of ionized
oxygen vacancies arisen from the reductive crystallization
atmosphere used during processing. As a consequence, the
dielectric loss (tan σ) and leakage conduction measured in
the resulting thin-film capacitors were significantly
reduced with respect to nominally undoped samples. The
improvement of this capacitor feature, combined with the
relatively high permittivities obtained in the films
(490–530), shows the effectiveness of dysprosium doping
within a thin-film fabrication method for potential
application into the multilayer ceramic capacitor
technology.},
cin = {PGI-7 / PGI-5 / JARA-FIT},
ddc = {660},
cid = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-5-20110106 /
$I:(DE-82)080009_20140620$},
pnm = {424 - Exploratory materials and phenomena (POF2-424)},
pid = {G:(DE-HGF)POF2-424},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000317407600039},
doi = {10.1111/jace.12182},
url = {https://juser.fz-juelich.de/record/135189},
}