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@ARTICLE{Cho:135190,
author = {Cho, Deok-Yong and Tappertzhofen, Stefan and Waser, R. and
Valov, Ilia},
title = {{C}hemically-inactive interfaces in thin film {A}g/{A}g{I}
systems for resistive switching memories},
journal = {Scientific reports},
volume = {3},
issn = {2045-2322},
address = {London},
publisher = {Nature Publishing Group},
reportid = {FZJ-2013-03155},
pages = {1169},
year = {2013},
abstract = {AgI nanoionics-based resistive switching memories were
studied in respect to chemical stability of the Ag/AgI
interface using x-ray absorption spectroscopy. The apparent
dissolution of Ag films of thickness below some tens of
nanometers and the loss of electrode/electrolyte contact was
critically addressed. The results evidently show that there
are no chemical interactions at the interface despite the
high ionic mobility of Ag ions. Simulation results further
show that Ag metal clusters can form in the AgI layer with
intermediate-range order at least up to next-next nearest
neighbors, suggesting that Ag can permeate into the AgI only
in an aggregated form of metal crystallite.},
cin = {PGI-7 / JARA-FIT},
ddc = {000},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000314394800005},
doi = {10.1038/srep01169},
url = {https://juser.fz-juelich.de/record/135190},
}