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@ARTICLE{Kavehei:135192,
author = {Kavehei, Omid and Linn, Eike and Nielen, Lutz and
Tappertzhofen, Stefan and Skafidas, Efstratios and Valov,
Ilia and Waser, R.},
title = {{A}n associative capacitive network based on nanoscale
complementary resistive switches for memory-intensive
computing},
journal = {Nanoscale},
volume = {5},
number = {11},
issn = {2040-3372},
address = {Cambridge},
publisher = {RSC Publ.},
reportid = {FZJ-2013-03157},
pages = {5119 -},
year = {2013},
abstract = {We report on the implementation of an Associative
Capacitive Network (ACN) based on the nondestructive
capacitive readout of two Complementary Resistive Switches
(2-CRSs). ACNs are capable of performing a fully parallel
search for Hamming distances (i.e. similarity) between input
and stored templates. Unlike conventional associative
memories where charge retention is a key function and hence,
they require frequent refresh cycles, in ACNs, information
is retained in a nonvolatile resistive state and normal
tasks are carried out through capacitive coupling between
input and output nodes. Each device consists of two CRS
cells and no selective element is needed, therefore, CMOS
circuitry is only required in the periphery, for addressing
and read-out. Highly parallel processing, nonvolatility,
wide interconnectivity and low-energy consumption are
significant advantages of ACNs over conventional and
emerging associative memories. These characteristics make
ACNs one of the promising candidates for applications in
memory-intensive and cognitive computing, switches and
routers as binary and ternary Content Addressable Memories
(CAMs) and intelligent data processing},
cin = {PGI-7 / JARA-FIT},
ddc = {600},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000319008700071},
doi = {10.1039/c3nr00535f},
url = {https://juser.fz-juelich.de/record/135192},
}