% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Cho:135194,
      author       = {Cho, Deok-Yong and Tappertzhofen, Stefan and Waser, R. and
                      Valov, Ilia},
      title        = {{B}ond nature of active metal ions in {S}i{O}2-based
                      electrochemical metallization memory cells},
      journal      = {Nanoscale},
      volume       = {5},
      number       = {5},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2013-03159},
      pages        = {1781-1784},
      year         = {2013},
      abstract     = {Electrochemical metallization cells are candidates for the
                      next-generation non-volatile memory devices based on
                      resistive switching. Despite the intensive studies in recent
                      years a microscopic model of the processes in these
                      nanoscale electrochemical systems is still missing and the
                      physicochemical properties of the active metal ions have
                      been rarely reported. We examined the bonding
                      characteristics of Cuz+ and Ag+ ions in SiO2-based cells
                      using soft X-ray absorption spectroscopy. Whereas the
                      Ag/SiO2 interfaces showed no chemical interaction of Ag
                      ions, the Cu/SiO2 showed clear signatures of partial
                      oxidation into two ionic species of Cu2+ and Cu+. The
                      analyses on the orbital hybridization strength evidently
                      showed that the Cu2+–O2− bonds in SiO2 are much weaker
                      than the Cu+–O2− bonds, analogous to the case of bulk
                      CuO and Cu2O. This suggests that the Cu2+ ions should be
                      more mobile and with a dominating role in the process of
                      resistive switching.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000314931900007},
      doi          = {10.1039/c3nr34148h},
      url          = {https://juser.fz-juelich.de/record/135194},
}