000135197 001__ 135197
000135197 005__ 20210129211814.0
000135197 0247_ $$2doi$$a10.1088/0953-8984/24/48/485002
000135197 0247_ $$2ISSN$$a1361-648X
000135197 0247_ $$2ISSN$$a0953-8984
000135197 0247_ $$2WOS$$aWOS:000311105400005
000135197 037__ $$aFZJ-2013-03162
000135197 082__ $$a530
000135197 1001_ $$0P:(DE-HGF)0$$aSchie, Marcel$$b0$$eCorresponding author
000135197 245__ $$aMolecular dynamics simulations of oxygen vacancy diffusion in SrTiO 3
000135197 260__ $$aBristol$$bIOP Publ.$$c2012
000135197 3367_ $$2DRIVER$$aarticle
000135197 3367_ $$2DataCite$$aOutput Types/Journal article
000135197 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1581580496_3774
000135197 3367_ $$2BibTeX$$aARTICLE
000135197 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000135197 3367_ $$00$$2EndNote$$aJournal Article
000135197 500__ $$3POF3_Assignment on 2016-02-29
000135197 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000135197 536__ $$0G:(DE-Juel1)jpgi70_20120501$$aModelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM) (jpgi70_20120501)$$cjpgi70_20120501$$fModelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)$$x1
000135197 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000135197 7001_ $$0P:(DE-HGF)0$$aMarchewka, Astrid$$b1
000135197 7001_ $$0P:(DE-HGF)0$$aMüller, T.$$b2
000135197 7001_ $$0P:(DE-HGF)0$$aDe Souza, Roger A$$b3
000135197 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4
000135197 773__ $$0PERI:(DE-600)1472968-4$$a10.1088/0953-8984/24/48/485002$$gVol. 24, no. 48, p. 485002 -$$n48$$p485002 -$$tJournal of physics / Condensed matter$$v24$$x1361-648X$$y2012
000135197 909__ $$ooai:juser.fz-juelich.de:135197$$pVDB
000135197 909CO $$ooai:juser.fz-juelich.de:135197$$pVDB
000135197 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000135197 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000135197 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000135197 9141_ $$y2013
000135197 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000135197 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000135197 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000135197 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000135197 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000135197 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000135197 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000135197 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000135197 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000135197 915__ $$0StatID:(DE-HGF)1020$$2StatID$$aDBCoverage$$bCurrent Contents - Social and Behavioral Sciences
000135197 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000135197 9201_ $$0I:(DE-82)080012_20140620$$kJARA-HPC$$lJARA - HPC$$x1
000135197 980__ $$ajournal
000135197 980__ $$aVDB
000135197 980__ $$aI:(DE-Juel1)PGI-7-20110106
000135197 980__ $$aI:(DE-82)080012_20140620
000135197 980__ $$aUNRESTRICTED