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001     135198
005     20210129211815.0
024 7 _ |a 10.1166/jnn.2012.6652
|2 doi
024 7 _ |a 1533-4880
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024 7 _ |a 1533-4899
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024 7 _ |a WOS:000312620200005
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037 _ _ |a FZJ-2013-03163
082 _ _ |a 540
100 1 _ |a Waser, Rainer
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|e Corresponding author
245 _ _ |a Redox-Based Resistive Switching Memories
260 _ _ |a Stevenson Ranch, Calif.
|c 2012
|b American Scientific Publ.
336 7 _ |a Journal Article
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500 _ _ |3 POF3_Assignment on 2016-02-29
536 _ _ |a 421 - Frontiers of charge based Electronics (POF2-421)
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588 _ _ |a Dataset connected to CrossRef, juser.fz-juelich.de
700 1 _ |a Waser, R.
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773 _ _ |a 10.1166/jnn.2012.6652
|g Vol. 12, no. 10, p. 7628 - 7640
|p 7628 - 7640
|n 10
|0 PERI:(DE-600)2060740-4
|t Journal of nanoscience and nanotechnology
|v 12
|y 2012
|x 1533-4899
909 C O |o oai:juser.fz-juelich.de:135198
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910 1 _ |a Forschungszentrum Jülich GmbH
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914 1 _ |y 2013
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