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000135288 0247_ $$2doi$$a10.1088/1748-0221/8/02/C02026
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000135288 041__ $$aEnglish
000135288 082__ $$a610
000135288 1001_ $$0P:(DE-HGF)0$$aMenouni, M$$b0$$eCorresponding author
000135288 1112_ $$aTopical Workshop on Electronics for Particle Physics 2012$$cOxford$$d17092012 - 21092012$$gTWEPP-2012$$wUK
000135288 245__ $$aSEU tolerant memory design for the ATLAS pixel readout chip
000135288 260__ $$aLondon$$bInst. of Physics$$c2013
000135288 300__ $$a?
000135288 3367_ $$0PUB:(DE-HGF)8$$2PUB:(DE-HGF)$$aContribution to a conference proceedings$$bcontrib$$mcontrib$$s1375708307_28272
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000135288 520__ $$aThe FE-I4 chip for the B-layer upgrade is designed in a 130 nm CMOS process. For this design, configuration memories are based on the DICE latches where layout considerations are followed to improve the tolerance to SEU. Tests have shown that DICE latches for which layout approaches are adopted are 30 times more tolerant to SEU than the standard DICE latches. To prepare for the new pixel readout chip planned for the future upgrades, a prototype chip containing 512 pixels has been designed in a 65 nm CMOS process and a new approach is adopted for SEU tolerant latches. Results in terms of SEU and TID tolerance are presented.
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000135288 7001_ $$0P:(DE-HGF)0$$aArutinov, D$$b1
000135288 7001_ $$0P:(DE-Juel1)142529$$aBackhaus, M$$b2$$ufzj
000135288 7001_ $$0P:(DE-HGF)0$$aBarbero, M$$b3
000135288 7001_ $$0P:(DE-HGF)0$$aBeccherle, R$$b4
000135288 7001_ $$0P:(DE-HGF)0$$aBreugnon, P$$b5
000135288 7001_ $$0P:(DE-HGF)0$$aCaminada, L$$b6
000135288 7001_ $$0P:(DE-HGF)0$$aDube, S$$b7
000135288 7001_ $$0P:(DE-HGF)0$$aDarbo, G$$b8
000135288 7001_ $$0P:(DE-HGF)0$$aFleury, J$$b9
000135288 7001_ $$0P:(DE-HGF)0$$aFougeron, D$$b10
000135288 7001_ $$0P:(DE-HGF)0$$aGarcia-Sciveres, M$$b11
000135288 7001_ $$0P:(DE-HGF)0$$aGensolen, F$$b12
000135288 7001_ $$0P:(DE-HGF)0$$aGnani, D$$b13
000135288 7001_ $$0P:(DE-HGF)0$$aGonella, L$$b14
000135288 7001_ $$0P:(DE-HGF)0$$aGromov, V$$b15
000135288 7001_ $$0P:(DE-HGF)0$$aHemperek, T$$b16
000135288 7001_ $$0P:(DE-HGF)0$$aJensen, F$$b17
000135288 7001_ $$0P:(DE-HGF)0$$aKaragounis, M$$b18
000135288 7001_ $$0P:(DE-HGF)0$$aKluit, R$$b19
000135288 7001_ $$0P:(DE-Juel1)VDB54619$$aKrueger, H$$b20
000135288 7001_ $$0P:(DE-Juel1)156521$$aKruth, A$$b21
000135288 7001_ $$0P:(DE-HGF)0$$aLu, Y$$b22
000135288 7001_ $$0P:(DE-HGF)0$$aRozanov, A$$b23
000135288 7001_ $$0P:(DE-HGF)0$$aSchipper, J -D$$b24
000135288 7001_ $$0P:(DE-HGF)0$$aZivkovic, V$$b25
000135288 7001_ $$0P:(DE-Juel1)VDB89362$$aMekkaoui, A$$b26
000135288 773__ $$0PERI:(DE-600)2235672-1$$a10.1088/1748-0221/8/02/C02026$$gVol. 8, no. 02, p. C02026 - C02026$$n02$$pC02026 - C02026$$tJournal of Instrumentation$$v8$$x1748-0221
000135288 8564_ $$uhttp://iopscience.iop.org/1748-0221/8/02/C02026/pdf/1748-0221_8_02_C02026.pdf
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