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| Home > Institute Collections > PGI > PGI-9 > Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy > print |
| 001 | 135983 | ||
| 005 | 20200423204949.0 | ||
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| 100 | 1 | _ | |a Lüth, H. |b 0 |
| 245 | _ | _ | |a Determination of the valence band offset of Si/Si0.7Ge0.3/Si quantum wells using deep level transient spectroscopy |
| 260 | _ | _ | |b American Institute of Physics |
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| 700 | 1 | _ | |a Apetz, R. |b 1 |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB5472 |a Vescan, L. |b 2 |
| 773 | _ | _ | |0 PERI:(DE-600)1476463-5 |a 10.1063/1.353984 |n 11 |p 7427 - 7430 |t Journal of applied physics |v 73 |y 1993 |
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