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@TECHREPORT{Schnfeld:136158,
      author       = {Schönfeld, B.},
      title        = {{U}ntersuchung von {F}renkeldefekten in
                      tieftemperaturbestrahlten {HCP} {K}ristallen mit {H}ilfe der
                      diffusen {R}öntgenstreuung. 1650},
      volume       = {1650},
      number       = {Juel-1650},
      address      = {Jülich},
      publisher    = {Kernforschungsanlage Jülich},
      reportid     = {PreJuSER-136158, Juel-1650},
      series       = {Berichte der Kernforschungsanlage Jülich},
      pages        = {88 S.},
      year         = {1980},
      note         = {Record converted from JUWEL: 18.07.2013},
      abstract     = {Single crystals of 3 hexagonal metals (Zn, Cd, Mg) were
                      irradiated at 4.5K with 3MeV electrons up to doses of $\sim
                      10^{19}$ $e^{-}$/cm$^{2}$. The irradiation induced defects
                      were investigated by measurements of the Huang diffuse
                      scattering of X-rays, the lattice parameter change and the
                      electrical resistivity change. Only for Zn a random
                      distribution of single interstitial atoms (S.I.A.) and
                      vacancies was found. The S.I.A. was characterized by a large
                      relaxation volume of (3.6±0.7) atomic volumes and a strong
                      anisotropy of the defect displacement field. Consistent with
                      a dumbbell configuration of the S.I.A. the large
                      displacement was along the c-axis. The contribution of a
                      Frenkel defect to the electrical resistivity change was
                      $\rho_{F}$ = (15.3±5.7) $\mu \Omega$cm/at\%. For Cd
                      interstitial agglomerates of <10 interstitials were found.
                      Their size increased with the irradiation dose. This
                      indicated interstitial mobility at the irradiation
                      temperature. For Mg interstitial agglomerates of 2-3
                      interstitials were observed. It was shown, that these
                      agglomerates were formed by interstitial migration during
                      irradiation, similar to Cd. In contrast to Cd, no dose
                      dependence of their size was found. This unique behaviour
                      was tentatively explained by the existence of a nucleation
                      barrier. During thermal annealing in stage II small
                      interstitial agglomerates of ~10 interstitials were found
                      for all 3 metals. In the case of Zn and Cd (c/a $\approx$
                      1.85) they seem to nucleate and grow on the basal plane, in
                      the case of Mg (c/a $\approx$ 1.6) however, on prismatic
                      planes.},
      cin          = {IFF},
      cid          = {I:(DE-Juel1)VDB241},
      shelfmark    = {FHCF - Defect characterization / FHCB - X-ray scattering /
                      FDFC - Radiation effects in metals, nuclear radiation
                      effects},
      typ          = {PUB:(DE-HGF)29},
      url          = {https://juser.fz-juelich.de/record/136158},
}