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@BOOK{Shen:136188,
      author       = {Shen, Wan},
      title        = {{I}nvestigation of resistive switching in barium strontium
                      titanate thin films for memory applications},
      volume       = {8},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-136188},
      isbn         = {978-3-89336-608-8},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / information},
      pages        = {114 S.},
      year         = {2010},
      note         = {Record converted from JUWEL: 18.07.2013; RWTH Aachen,
                      Diss., 2009},
      abstract     = {Resistive random access memory (RRAM) has attracted much
                      attention due to its low power consumption, high speed
                      operation, non-readout disturbance and high density
                      integration potential and is regarded as one of the most
                      promising candidates for the next generation non-volatile
                      memory. The resistive switching behavior of Mn-doped
                      BaSrTiO$_{3}$ (BST) thin films with different crystalline
                      properties was investigated within this dissertation. The
                      laser fluence dependence was checked in order to optimize
                      the RRAM properties. Although the film epitaxial quality was
                      improved by reducing the laser energy during deposition
                      process, the yields fluctuated and only 3\% RRAM devices
                      with highest epitaxial quality of BST film shows resistive
                      switching behavior instead of 67\% for the samples with
                      worse film quality. It gives a clue that the best thin film
                      quality does not result in the best switching performance,
                      and it is a clear evidence of the importance of the defects
                      to obtain resistive switching phenomena. The bipolar
                      resistive switching behavior was studied with epitaxial BST
                      thin films on SRO/STO. Compared to Pt top electrode, the
                      yield, endurance and reliability were strongly improved for
                      the samples with W top electrode. Whereas the samples with
                      Pt top electrode show a fast drop of the resistance for both
                      high and low resistance states, the devices with W top
                      electrode can be switched for 10$^{4}$ times without any
                      obvious degradation. The resistance degradation for devices
                      with Pt top electrode may result from the diffusion of
                      oxygen along the Pt grain boundaries during cycling whereas
                      for W top electrode the reversible oxidation and reduction
                      of a WO$_{x}$ layer, present at the interface between W top
                      electrode and BST film, attributes to the improved switching
                      property. The transition from bipolar to unipolar resistive
                      switching in polycrystalline BST thin films was observed. A
                      forming process which induces a metallic low resistance
                      state is prerequisite for the observation of unipolar
                      switching behavior. The absence of unipolar switching in
                      single crystalline samples may relate to space charge
                      depletion layers at grain boundaries and their impact on the
                      electronic conduction properties as well as the different
                      local heat transfer in thin films. By controlling the
                      switching voltage, the bipolar and unipolar resistive
                      switching can be alternated in polycrystalline BST thin
                      films. The bipolar/unipolar alternation is dynamically
                      repeatable and the alternation may relate to the local
                      modification of broken filaments by breakdown or oxygen
                      vacancy movement.},
      cin          = {IEF-2},
      ddc          = {500},
      cid          = {I:(DE-Juel1)VDB810},
      shelfmark    = {FGN - Nanotechnology / FGP - Nanoelectronics / TBF -
                      Semiconductor devices / FGN - Nanotechnologie},
      typ          = {PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/136188},
}