000136215 001__ 136215
000136215 005__ 20240610121323.0
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000136215 0247_ $$2Handle$$a2128/3772
000136215 020__ $$a978-3-89336-636-1
000136215 037__ $$aPreJuSER-136215
000136215 041__ $$aEnglish
000136215 082__ $$a500
000136215 082__ $$a620
000136215 084_0 $$aFGP - Nanoelectronics
000136215 084_0 $$aFJB - Electric materials
000136215 084_1 $$aFGN - Nanotechnologie
000136215 1001_ $$0P:(DE-Juel1)VDB61380$$aNauenheim, Christian$$b0$$eCorresponding author$$gmale$$ufzj
000136215 245__ $$aIntegration of resistive switching devices in crossbar structures
000136215 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2010
000136215 300__ $$aXII, 142 S.
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000136215 4900_ $$0PERI:(DE-600)2725212-7$$aSchriften des Forschungszentrums Jülich. Reihe Information / information$$v10
000136215 502__ $$aRWTH Aachen, Diss., 2009$$bDr.$$cRWTH Aachen$$d2009
000136215 500__ $$aRecord converted from JUWEL: 18.07.2013
000136215 520__ $$aConventional CMOS-technology defined by optical lithography will reach its physical limits within the next years together with technologies adopted for data storage. This work presents and combines the alternative concepts of resistively switching devices, usable as nonvolatile memory elements or switches, and nano crossbar architecture, which defer these physical limits sustainably. The nano crossbar architecture consists of a functional component that is integrated between two perpendicularly crossing metallization lines. This configuration allows for a high integration density due to a minimal footprint of 4 F$^{2}$ (F = minimum Feature size). The basic elements are straight metallization lines with excellent scaling capability and fabricated by competitive technologies such as nano imprint lithography. The functional component can be composed of reversibly switching TiO$_{2}$, which is integrated into metal/ insulator/ metal elements (MIM). This can be operated by corresponding set- and reset- voltages between at least two resistance states, which represent a logic "0" or "1". The state is nonvolatile and can be nondestructively determined by voltages below these programming values. The field of application includes memory matrices, which are also named passive ReRAM (Resistive Random Access Memory), elements of the DRL (Diode-Resistor Logic) and RTL (Resistor-Transistor Logic), as well as router and multiplexer. Because of their passive properties, an active control circuitry, which is currently based upon CMOS, is necessary. For this reason, all materials and fabrication technologies are CMOS compatible. The developed and optimized lift-off metallization in combination with electron beam direct writing is a flexible method to fabricate metallization lines with different metals and with a width of 50 nm. The fabricated devices comprise crossbar arrays with a size of 64 × 64 bit and a 30 nm thermally evaporated electrode of a Pt/ Ti double layer. These were examined in terms of ballistic charge transfer mechanisms, since the dimensions of the conductor were in the range of the electron mean free path. The experimental results could be explained by the models of Fuchs-Sondheimer and Mayadas-Shatzkes. Finally, the metal lines offered a high yield and a good scalability with low resistances per unit length. The TiO$_{2}$ thin film was reactively sputtered or deposited by ALD (Atomic Layer Deposition). Subsequently, the electrical transfer from the insulating to the switching state, also called electroforming, was examined in detail and allowed for a reliable bipolar switching. The required operating voltages and currents of 100 · 100 nm$^{2}$ large cells are 2 V and several 100 $\mu$A, [...]
000136215 650_4 $$aRRAM (Resistive Random Access Memory)
000136215 650_4 $$aresistive switching
000136215 650_4 $$asemiconductor device
000136215 650_4 $$alithography
000136215 650_4 $$ananostructures
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000136215 9201_ $$0I:(DE-Juel1)ZB-20090406$$kZB$$lZentralbibliothek$$x0
000136215 9201_ $$0I:(DE-Juel1)VDB782$$kIFF-2$$lTheorie der Weichen Materie und Biophysik$$x1
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