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@BOOK{Nauenheim:136215,
      author       = {Nauenheim, Christian},
      title        = {{I}ntegration of resistive switching devices in crossbar
                      structures},
      volume       = {10},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-136215},
      isbn         = {978-3-89336-636-1},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / information},
      pages        = {XII, 142 S.},
      year         = {2010},
      note         = {Record converted from JUWEL: 18.07.2013; RWTH Aachen,
                      Diss., 2009},
      abstract     = {Conventional CMOS-technology defined by optical lithography
                      will reach its physical limits within the next years
                      together with technologies adopted for data storage. This
                      work presents and combines the alternative concepts of
                      resistively switching devices, usable as nonvolatile memory
                      elements or switches, and nano crossbar architecture, which
                      defer these physical limits sustainably. The nano crossbar
                      architecture consists of a functional component that is
                      integrated between two perpendicularly crossing
                      metallization lines. This configuration allows for a high
                      integration density due to a minimal footprint of 4 F$^{2}$
                      (F = minimum Feature size). The basic elements are straight
                      metallization lines with excellent scaling capability and
                      fabricated by competitive technologies such as nano imprint
                      lithography. The functional component can be composed of
                      reversibly switching TiO$_{2}$, which is integrated into
                      metal/ insulator/ metal elements (MIM). This can be operated
                      by corresponding set- and reset- voltages between at least
                      two resistance states, which represent a logic "0" or "1".
                      The state is nonvolatile and can be nondestructively
                      determined by voltages below these programming values. The
                      field of application includes memory matrices, which are
                      also named passive ReRAM (Resistive Random Access Memory),
                      elements of the DRL (Diode-Resistor Logic) and RTL
                      (Resistor-Transistor Logic), as well as router and
                      multiplexer. Because of their passive properties, an active
                      control circuitry, which is currently based upon CMOS, is
                      necessary. For this reason, all materials and fabrication
                      technologies are CMOS compatible. The developed and
                      optimized lift-off metallization in combination with
                      electron beam direct writing is a flexible method to
                      fabricate metallization lines with different metals and with
                      a width of 50 nm. The fabricated devices comprise crossbar
                      arrays with a size of 64 × 64 bit and a 30 nm thermally
                      evaporated electrode of a Pt/ Ti double layer. These were
                      examined in terms of ballistic charge transfer mechanisms,
                      since the dimensions of the conductor were in the range of
                      the electron mean free path. The experimental results could
                      be explained by the models of Fuchs-Sondheimer and
                      Mayadas-Shatzkes. Finally, the metal lines offered a high
                      yield and a good scalability with low resistances per unit
                      length. The TiO$_{2}$ thin film was reactively sputtered or
                      deposited by ALD (Atomic Layer Deposition). Subsequently,
                      the electrical transfer from the insulating to the switching
                      state, also called electroforming, was examined in detail
                      and allowed for a reliable bipolar switching. The required
                      operating voltages and currents of 100 · 100 nm$^{2}$ large
                      cells are 2 V and several 100 $\mu$A, [...]},
      cin          = {ZB / IFF-2},
      ddc          = {500},
      cid          = {I:(DE-Juel1)ZB-20090406 / I:(DE-Juel1)VDB782},
      shelfmark    = {FGP - Nanoelectronics / FJB - Electric materials / FGN -
                      Nanotechnologie},
      typ          = {PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/136215},
}