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000136230 0247_ $$2Handle$$a2128/3801
000136230 020__ $$a978-3-89336-644-6
000136230 037__ $$aPreJuSER-136230
000136230 041__ $$aEnglish
000136230 082__ $$a500
000136230 084_0 $$aFJK - Specific semiconductor materials
000136230 084_0 $$aFJL - Physics of solid state devices
000136230 084_0 $$aFJCK - Electrical conduction in solid materials
000136230 084_0 $$aFJH - Semiconductor physics
000136230 084_1 $$aFJK - Halbleitermaterialien
000136230 084_1 $$aFZJ - Schriftenreihen des Forschungszentrums Jülich
000136230 1001_ $$0P:(DE-Juel1)VDB76198$$aUrban, Christoph Johannes$$b0$$eCorresponding author$$gmale$$ufzj
000136230 245__ $$aDC and RF characterization of NiSi Schottky barrier MOSFETs with dopant segregation
000136230 260__ $$aForschungszentrum, Zentralbibliothek, Jülich$$c2010
000136230 300__ $$aIV, 151 S.
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000136230 4900_ $$0PERI:(DE-600)2725212-7$$aSchriften des Forschungszentrums Jülich. Reihe Information / information$$v12
000136230 502__ $$aRWTH Aachen, Diss., 2009$$bDr.$$cRWTH Aachen$$d2009
000136230 500__ $$aRecord converted from JUWEL: 18.07.2013
000136230 520__ $$aThe continuous downscaling of the Si-based microelectronics, which is the fundament of today’s information technology, requires novel concepts for the source/drain (S/D) architecture of metal-oxide-semiconductor field-effect transistors (MOSFETs). The improvement of the carrier injection is of prime importance because of the increasing impact of parasitic resistances which strongly limit the performance of ultimately scaled transistors. Moreover, steeper junctions at the contact/channel interfaces become more and more crucial for nanoscale devices. In this context, Schottky-barrier (SB) MOSFETs with metallic S/D are promising performance boosters since they offer low extrinsic resistances and atomically abrupt junctions formed at the metal/silicon interface. However, a drawback of these devices is their performance which is inferior to conventional MOSFETs due to the relatively high Schottky barrier. Recently, dopant segregation has attracted much interest since the highly doped layer formed at the silicide/silicon interface during silicidation strongly improves the tunneling probability of carriers through Schottky contacts. The present thesis studies the integration of NiSi with dopant segregation in SBMOSFETs on thin-body silicon-on-insulator experimentally. The objective of the detailed direct-current (DC) and radio-frequency (RF) characterization is to gain a better insight into the physics of these devices. The modeling of NiSi/p-Si Schottky contacts using a numerical model which combines the thermionic emission theory with image-force induced barrier lowering and quantum-mechanical tunneling provides a solid understanding of the carrier injection of Schottky contacts. The characterization of Schottky diodes with silicidation induced dopant segregation using boron, arsenic and antimony reveals effective Schottky barrier heights in the 0.1 eV regime depending on the implantation dose. Below this value SB-MOSFETs are capable of outperforming conventional MOSFETs. Successfully fabricated long- and short-channel p- and n-type SB-MOSFETs with and without dopant segregation are characterized performing direct-current (DC) measurements. Transistors with 80 nm channel length reveal on-currents as high as 427 μA/μm for p-type and 1150 μA/μm for n-type devices, respectively, which compete well with state-of-the-art SB-MOSFETs. [...]
000136230 650_4 $$aMOS transistor
000136230 650_4 $$adiode
000136230 650_4 $$anickel
000136230 650_4 $$asilicide
000136230 650_4 $$ahigh frequency engineering
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000136230 9141_ $$y2013
000136230 920__ $$lyes
000136230 9201_ $$0I:(DE-Juel1)VDB799$$kIBN-1$$lHalbleiter-Nanoelektronik$$x0
000136230 970__ $$a2128/3801
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