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@BOOK{Urban:136230,
      author       = {Urban, Christoph Johannes},
      title        = {{DC} and {RF} characterization of {N}i{S}i {S}chottky
                      barrier {MOSFET}s with dopant segregation},
      volume       = {12},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Forschungszentrum, Zentralbibliothek, Jülich},
      reportid     = {PreJuSER-136230},
      isbn         = {978-3-89336-644-6},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / information},
      pages        = {IV, 151 S.},
      year         = {2010},
      note         = {Record converted from JUWEL: 18.07.2013; RWTH Aachen,
                      Diss., 2009},
      abstract     = {The continuous downscaling of the Si-based
                      microelectronics, which is the fundament of today’s
                      information technology, requires novel concepts for the
                      source/drain (S/D) architecture of metal-oxide-semiconductor
                      field-effect transistors (MOSFETs). The improvement of the
                      carrier injection is of prime importance because of the
                      increasing impact of parasitic resistances which strongly
                      limit the performance of ultimately scaled transistors.
                      Moreover, steeper junctions at the contact/channel
                      interfaces become more and more crucial for nanoscale
                      devices. In this context, Schottky-barrier (SB) MOSFETs with
                      metallic S/D are promising performance boosters since they
                      offer low extrinsic resistances and atomically abrupt
                      junctions formed at the metal/silicon interface. However, a
                      drawback of these devices is their performance which is
                      inferior to conventional MOSFETs due to the relatively high
                      Schottky barrier. Recently, dopant segregation has attracted
                      much interest since the highly doped layer formed at the
                      silicide/silicon interface during silicidation strongly
                      improves the tunneling probability of carriers through
                      Schottky contacts. The present thesis studies the
                      integration of NiSi with dopant segregation in SBMOSFETs on
                      thin-body silicon-on-insulator experimentally. The objective
                      of the detailed direct-current (DC) and radio-frequency (RF)
                      characterization is to gain a better insight into the
                      physics of these devices. The modeling of NiSi/p-Si Schottky
                      contacts using a numerical model which combines the
                      thermionic emission theory with image-force induced barrier
                      lowering and quantum-mechanical tunneling provides a solid
                      understanding of the carrier injection of Schottky contacts.
                      The characterization of Schottky diodes with silicidation
                      induced dopant segregation using boron, arsenic and antimony
                      reveals effective Schottky barrier heights in the 0.1 eV
                      regime depending on the implantation dose. Below this value
                      SB-MOSFETs are capable of outperforming conventional
                      MOSFETs. Successfully fabricated long- and short-channel p-
                      and n-type SB-MOSFETs with and without dopant segregation
                      are characterized performing direct-current (DC)
                      measurements. Transistors with 80 nm channel length reveal
                      on-currents as high as 427 μA/μm for p-type and 1150
                      μA/μm for n-type devices, respectively, which compete well
                      with state-of-the-art SB-MOSFETs. [...]},
      cin          = {IBN-1},
      ddc          = {500},
      cid          = {I:(DE-Juel1)VDB799},
      shelfmark    = {FJK - Specific semiconductor materials / FJL - Physics of
                      solid state devices / FJCK - Electrical conduction in solid
                      materials / FJH - Semiconductor physics / FJK -
                      Halbleitermaterialien / FZJ - Schriftenreihen des
                      Forschungszentrums Jülich},
      typ          = {PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/136230},
}