|
Dr.
R. Dittmann
|
Pulsed
laser deposition of dielectric and conducting oxide thin films and
multilayers |
|
Dr.
P. Ehrhart
|
MOCVD
methods for electroceramic thin films; X-ray diffraction and optical
spectroscopy |
|
Dr.
R. Elsebrock
|
Processing
of electroceramic bulk materials; microwave characterization dielectric
properties |
|
Dr.
S. Hoffmann-Eifert
|
High-permittivity
electroceramic thin films: MOCVD, dielectric properties, charge transport,
defect chemistry |
|
Dr.
S. Karthauser
|
Self-assembly
processes of oxidic and metallic nanostructures |
|
Dr.
H. Kohlstedt
|
Reactive
ion beam etching of ceramic and metallic materials, magnetic and ferroelectric
tunnel junctions |
|
Dr.
W. Krasser
|
Optical
excitation-processes in electroceramic materials; light-annealing
processes |
|
Dr.
P. Meuffels
|
Processing
of electroceramic materials; studies of the defect chemistry |
|
Dr.
Ch. Pithan
|
Processing
of hot pressed nanocrystalline and grain boundary decorated bulk electroceramics |
|
Prof.
T. Schober
|
High
temperature proton conduction, thermogravimetry, impedance spectroscopy,
transmission electron microscopy |
|
Dr.
H. Schroeder
|
Technology
and properties of (metal) electrodes for electroceramic thin films;
mechanical properties and electromigration in thin films and interconnects |
|
Dr.
K. Szot
|
Study
of the surface layer of perovskite materials of AB03 structure |
|
Prof
R. Waser
|
Electronic
oxides and integration of electroceramic thin films |
|
H.
Bierfeld
|
Ceramic
technology and sputtering techniques |
|
DI
J. Friedrich
|
Thermogravimetric
analysis; Transmission electron microscopy |
|
M.
Gebauer
|
Metal
organic chemical vapor deposition (MOCVD)of oxides; electrical measuring
setups for atomic force microscopy (AFM) |
|
M.
Gerst
|
Measuring
techniques; network administration |
|
DI
H. Haselier
|
Metallization
and thin film technology; clean-room technology |
|
B.
Hermanns
|
RIBE,
sputtering of magnetic materials |
|
DI
H. John
|
Clean-room
technology, microlithography and optical laboratory; LRP |
|
DI
C. Makovicka
|
Ceramic
technology; powder processing |
|
O.
Baldus (TH Aachen)
|
Laser
annealing of CSD |
|
F.
Fitsilis (TH Aachen)
|
Thin
film capacitors for future DRAM applications using the MOCVD technology |
|
M.
Fitsilis
(Univ. of Thessaloniki)
|
Simulation
and design concepts of ferroelectric field effect transistor circuits |
|
R.
Ganster (TH Aachen)
|
MOCVD
growth of alkaline earth titanate-zirconate thin films; optimization
of growth processes; layered structures; electrical characterization |
|
A.
Gerber (Uni Köln)
|
Epitaxial
ferroelectric layers on silicon substrates and their use as field
effect transistors |
|
Ch.
Ohly (TH Aachen)
|
Defect
structures in doped titanate thin films: electrical and morphological
properties |
|
St.
Regnery (TH Aachen)
|
MOCVD
planetary reactor processes |
|
S.
Ritter (TH Aachen)
|
MOCVD
growth of ultrathin ferroelectric films and electrical characterization |
|
J.
Rodriguez (Uni Köln)
|
Ferroelectric
capacitors with oxide electrodes and tunneling |
|
S.
Schmitz, (TH Aachen)
|
Influence
of the contact metal on the leakage current and dielectric
permittivity of electroceramic thin film capacitors |
|
St.
Schneider (TH Aachen)
|
Reactive
ion etching (RIE) and reactive ion beam etching (RIBE) of ceramic
thin films |
|
S.
Stein (Uni Köln)
|
Spin
injection devices |
Materie
wwwiff@fz-juelich.de
