We prepare epitaxial Fe(5 nm)/Si(0.8-2 nm)/Fe(5 nm) ferromagnetic tunneling junctions with strong anti ferromagnetic interlayer coupling. Transport properties in CPP geometry reveal (i) a strong increase of the resistance times area product with spacer thickness, (ii) parabolic dIldV-V characteristics, and (iii) a small and negative temperature coefficient of the zero-bias resistance. Therefore, anti ferromagnetic interlayer coupling and transport via tunneling coexists in these junctions.