Forschungszentrum Jülich
Institut für Festkörperforschung

Optimizing the GMR effect in NiFe/Cu/Co pseudo spin-valves prepared by magnetron sputtering
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Amitesh Paul, Thorsten Damm, Daniel E. Bürgler, and Peter Grünberg
Institute "Electronic Properties"
Simon Stein and Hermann Kohlstedt
Institute "Electroceramic Materials"

We study the dependence of magnetic and magnetotransport properties of NiFe/Cu/Co pseudo spin-valves on the pressure of the Ar sputtering gas during magnetron deposition. The giant magnetoresistance (GMR) ratio as a function of the sputtering pressure behaves non-monotonic with a maximum of about 4% at an intermediate pressure of 0.87 x 10-2 mbar. Atomic force microscopy image reveal a variation of the grain structure with increasing sputtering pressure: The grain size first decreases and then the grains start clustering for highest pressures. These changes influence the spin-independent scattering and thus the GMR ratio via the saturation resistance Rs.


 

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