State-of-the-art integrated devices combine the classical semiconductors with electroceramic materials in order to further increase the degree of miniaturization and to show up new functional properties like for ex-ample non-volatility in ferroelectric memories (FeRAMs). As a consequence of decreasing feature sizes, the dimensions of the integrated ceramic thin films are reduced to several ten nanometers on the lateral scale and down to a few nanometers in thickness. Still one of the major difficulties in the physical description of the films, which is necessary for a precise tailoring of materials, is that properties become drastically different with decreasing dimensions. This point is addressed in our studies with respect to the analysis of the conduc-tivity characteristics of SrTi03 thin films with different morphologies and nanocrystalline BaTi03 ceramic.