1. Ceramic Superconductors: Thin-film and heterostructure production, Josephson effects, and their application in magnetometer systems, magnetic-field microscopy and spectroscopic techniques.
2. Semiconductors: Structural investigations, mainly by transmission electron microscopy, of thin films and heterostructures. Study of electronic states in compound semiconductors by scanning tunneling microscopy employing a technique developed in our group. It permits, via the detection of the far-reaching Debye screening cloud at the surface, an investigation of charged doping or impurity atoms in the bulk.
3. Metallic Alloys: This concerns two major fields, quasicrystalline alloys and structurally complex alloy phases (SCAP). We are growing large single quasicrystals and SCAP crystals for our own research but also for users world-wide. Our own work concentrates on phase-diagrams, plasticity and surface physics.
4. Electroceramics: In this field we take advantage of our long-standing experience with respect to perovskitic materials both in preparation and in transmission electron microscopy. In collaboration with the Institut für Elektrokeramische Materialien (Prof. Waser) we dedicate a large research capacity to the investigation of the structural aspects of the production and properties of electroceramic thin films.
5. High-Resolution Electron Microscopy: The theoretical, technical and methodical aspects of atomic-resolution transmission electron microscopy are one of the central fields of interest of our group. Computer program packages for the exit wave-function reconstruction developed in the institute are in use world-wide. The institute co-developed and houses the world's first aberration-corrected transmission electron microscope with a record resolution of 1.2 Å at 200 kV.
6. The institute operates together with the Institut für Streumethoden (Prof. Brückel) the IFF laboratory for crystal growth.

The institute operates sputtering deposition machines, some of them with three-target facilities, which were developed and built in the institute for the high-quality deposition of ceramic superconductor thin films and heterostructures. Copies of these machines could be sold successfully to laboratories around the world. For SQUID reference studies we have a magnetically shielded room. For device production local clean room, structuring and packaging facilities are available. The institute operates the Jülich Center for High-Resolution Electron Microscopy with two 400 kV JEOL machines of the type 4000 EX/FX, a JEOL 2000 EX, a PHILIPS CM20 FEG, the spherical-aberration corrected PHILIPS CM200 FEG and a JEOL 840A scanning microscope. The new DFG-funded SATEM instrument, an aberration corrected sub-Ångstrom TEM produced by ZEISS-LEO will be installed in autumn 2003. Our instruments for scanning tunneling microscopy: Two microscopes with in-situ cleaving facilities and ex-situ heating up to 750 °C and an in-situ heating STM (Omicron). For the work on alloy plasticity a Zwick mechanical testing system is available.

The YBa₂Cu₃O₇ dc-SQUID sensors, developed and produced in our institute show the world’s highest sensitivity and have already found many applications around the world. Distributed by TTB (FZJ) and Tristan Technologies Inc.(San Diego, California) our SQUIDs are used in commercial measurement systems. The market demands represent challenges to science and technology, and our work in this field will be continued as long as we can derive good science from it. Submicrometer wide high-Tc bicrystal Josephson junctions with a normal state resistance of about 10 W and a critical current density of about 2 ´ 10⁴ A/cm² (I_cR_n product of about 400 µV) at 77.4 K were developed. We have significantly improved the noise properties of dc flip-chip magnetometers with submicrometer wide bicrystal junctions. We demonstrated a modulation voltage V_pp up to 80 µV compared to about 30 µV for the magnetometers with 1.5 µm junctions. The noise of the magnetometers with electronics was about 6 fT/Ö Hz at frequencies above 100 Hz and about 20 fT/Ö Hz at 1 Hz. An axial first order gradiometer system, gradient resolution of about 1 fT/cmÖ Hz at 77.4 K, was developed for biomagnetic measurements. It was successfully used in a BMBF project on biomagnetism and application in clinical environment. For application in semiconductor industry a non-contact measurement system for the distribution of the photo-induced magnetic field from p-n junctions in devices using a laser SQUID microscope and our SQUID sensors was developed successfully in Japan.

In the framework of our collaboration with the Institute of Radio Engineering, Moscow, we pursue our development of Hilbert-spectroscopy for the far-infra red range. For this we have measured the critical current density (j_C) distribution of [001]-tilt YBa₂Cu₃O₇ bicrystal Josephson junctions by means of the laser probing technique. The topography of the grain boundaries for the junctions with maximum and minimum j_C was studied by AFM and high-resolution TEM. We could show: The boundaries with high j_C consist mainly of symmetrical while those with low j_C consist of asymmetrical facets. In junctions optimized on this basis we investigated the broadband spectral range from GHz to THz frequencies. The low-frequency limit of the Josephson effect could be shown to be due to the finite linewidth of the Josephson oscillations while the high-frequency limit is determined by interaction of Josephson oscillations with strong optical phonons in YBa₂Cu₃O₇. A Hilbert spectrometer for operation with pulsed far-infrared radiation has been developed and characterized. It employs a [001]-tilt YBa₂Cu₃O_7-x bicrystal junction in an optical cryostat. The spectral range of the spectrometer extends from 30 to 1200 GHz at the junction temperature of 78 K and can be shifted to the higher frequencies by lowering the junction temperature. We have demonstrated earlier that Hilbert-spectroscopy has great potential for beam diagnostics in high-energy electron accelerators. New applications are in the testing of ultra-fast electronic devices.

A scanning SQUID microscope for the investigation of room temperature samples has been built and successfully tested (collaboration with ZEL). Its resolution surpasses that of commercial systems. The application of this type of microscope for information technology especially in the field of failure analysis of semiconductor devices, e.g. the non-destructive detection of package- or chip level shorts of micro circuits, or the investigation of magnetic storage devices looks promising.

Setting a benchmark in quantitative diffraction contrast imaging, the gas pressure of helium-filled nanocracks formed upon implantation and annealing of silicon was measured for individual cavities at high precision. This parameter, which plays an import role in the plastic relaxation of implanted semiconductors, has been directly measured for the first time.

Our laboratory is still the only one operating a spherical-aberration corrected TEM. The technique of multipole-aberration corrector systems pioneered by the institute together with CEOS, Heidelberg, and TU Darmstadt has started a new era in transmission electron microscopy. All TEM companies, ZEISS-LEO Oberkochen, FEI (USA, formerly Philips Electron Optics), JEOL and Hitachi (Japan) are working on new microscope designs containing correctors. Our institute receives a large number of international visitors every year who are interested in the new technology. On the other hand, the very high number of invited keynote lectures on international conferences underlines the pioneering role and high reputation of our group in this field. The international electron optics community reacted enthusiastically to our discovery that adjusting small negative spherical-aberration values (by overcompensation of the original instruments aberration) revolutionizes atomic-resolution imaging. Negative spherical aberration imaging allows, e.g., to image oxygen in perovskite ceramics (SCIENCE, in press) where the local oxygen content sensitively controls the electronic properties.

The alloy physics group has successfully started an extended research program in the new field of complex alloy phases (SCAP). This concerns intermetallics with giant unit cells containing hundreds to thousands of atoms on which essentially nothing is known with respect to physical properties. Procedures for the growth of centimeter-sized high-quality single crystals of a number of such alloys were developed. These constitute the first reliable samples for physical property measurements of this novel class of materials. A special Symposium was organized by us and Prof. Trebin, University of Stuttgart, at the DPG Frühjahrstagung 2002 in Regensburg. This field was selected (spring 2002) by the French and Germany ministers of science as a field of preference for French-Germany science collaboration in materials science. Structurally complex alloy phases is also the topic of a European Network of Excellence "CMA" (Coordinators: Profs. K. Urban, Jülich, J.-M. Dubois, Nancy, L. Schlapbach, Fribourg, J. Hafner, Wien) to be applied for in the 6^th Framework Program of the EC. The Chinese-German research program on Modern Metallic Materials Design organized on behalf of the DFG and the NSFC by Profs. Herlach, Köln, and Urban, Jülich, has been granted by the DFG Senate in September 2002. The work of our group together with the Institute of Physics CAS and Wuhan University on SCAP has started in December 2002.

In recent years great efforts went into joint doctor student programs with foreign universities. Formal contracts were signed with the Russian Academy of Sciences, the University of Kiev, the Tsinghua University and the Institute of Physics, Beijing, the Dalian University and Wuhan University, China. In the framework of this special program the doctor students are working up to three years in Jülich on a grant supervised by the Jülich Doktorandenausschuß, but they will pass their examina in their home university. A number of doctor students from Moscow Institute of Science and Technology, of Dalian University and of Wuhan University where Prof. Urban holds a professorship are working at Jülich. Students from the Institute of Physics will follow during this year.

It was a great gain and honor for the institute to be the host for extended stays of the Humboldt prizewinners Prof. Frans Spaepen, Harvard University, Cambridge, Mass., and Prof. Berry Carter, University of Minnesota, Minneapolis.

Prof. Dr. Knut Urban

Personnel 2002 / 2003 and areas of activity

Scientific Staff	Field of Activity	No.
Dr. Y. Divin	Hilbert-spectroscopy	2342004
Dr. Ph. Ebert	Scanning tunneling microscopy of semiconductors and quasicrystals	2310204 2342004
Dr. M. Faley	High-Tc-Superconductor SQUIDs, Multilayer structures, SQUID-Microscopy	2342004
Dr. M. Feuerbacher	Plasticity of quasicrystals	2310204
Dr. B. Grushko	Crystal growth, phase diagrams of alloys	2310204
Dr. C.L. Jia	Characterization of superconductors, diamond and electroceramic films by high-resolution electron microsopy	2342004
Dr. M. Lentzen	Reconstruction techniques in high-resolution electron microscopy, Cs-corrected transmission electron microscopy for imaging of interfaces in semiconductors and of superconducting materials	2310204 2342004
Dr. M. Luysberg	Transmission electron microscopy of semiconductor heterostructures, low-temperature GaAs and microcrystalline silicon	2342004
Dr. U. Poppe	Superconductivity, tunneling spectroscopy, High-Tc superconductor thin films and multilayers, SQUID-Microscopy	2342004
Dr. A. Thust	Reconstruction techniques in high-resolution electron microscopy, Cs-corrected transmission electron microscopy for imaging of interfaces in semiconductors, electron microscopy of superconducting materials	2342004 2310204
Prof. Dr. K. Urban	Head of Institute	2310204 2342004

Guests
J. Gebauer	UC at Berkeley, STM of semiconductors	2342004

 

Baier,F.*; Müller,M.A.*; Sprengel,W.*; Grushko,B.; Strertzel,W.*; Assmus,W.*; Schäfer,H.E.*
Atomic defects in Al-Pd-Mn : a study by means of positron annihilation spectroscopy
Materials science forum, 363-365 (2002), S. 179 - 181

Bert,F.*; Belessa,G.*; Grushko,B. C.
Tunneling states anisotropy in a single grain decagonal quasicrystal
Physical review letters, 88 (2002), 25, S. 255901-1 - 255901-9)

Cao,L. X.*; Kremer,R.K.*; Qin,Y.L.; Brötz,J.*; Liu,J. S.*; Zegenhagen,J.*
Stress change in YBa2Cu3O7-delta close to the superconducting transition
Physical review B, 66 (2002), S. 054511

Cao,L. X.*; Qin,Y. L.; Deac,A.*; Snigireva,I.*; Zegenhagen,J.*
Microstructure of YBa2O7-delta/Pb(Zr1-xTix)O3(x="0",0.47) heterostructures
Journal of physics: condensed matter, 14 (2002), S. 3093 - 3097

Chen,J. H.; Jia,C.L.; Urban,K.; Chen,C. L.*
Unusual lattice distortion in Ba0.5Sr0.5TiO3 thin films on a LaAlO3 substrate
Applied physics letters, 81 (2002), S. 1291

Divin,Y. Y.; Volkov,O. Y.*; Laytti,M.; Shirotov,V. V.; Pavlovskii,V. V.*; Poppe,U.; Shadrin,P. M.; Urban,K.
Hilbert spectroscopy from microwave to terahertz frequencies by high-Tc Josephson junctions
Physica C, (2002)

Divin,Y.Y.; Poppe,U.; Jia,C.L.; Shadrin,P.M.*; Urban,K.
Structural and electrical properties of YBa2Cu3O7(100)-tilt grain boundary josephson junctions with large IcRn-products on SrTiO3 bicrystals
Physica C, 372-376 (2002), S. 115 - 118

Divin,Y.Y.; Volkov,O.Y.*; Liatti,M.*; Shirotov,V.V.*; Pavlovskii,V.V.*; Poppe,U.; Shadrin,P.M.*; Urban,K.
Hilbert spectroscopy from gigahertz to terahertz frequencies by high-Tc Josephson junctions
Physica C, 372-376 (2002), S. 416 - 419

Dolinsek,J.*; Apih,T.*; Jeglic,P.*; Feuerbacher,M.; Calvo-Dahlborg,M.*; Dubois,J.M.*
Atomic jumps in quasiperiodic Al72.6Ni10.5Co16.9 and relatad crystalline material
Physical review B, 65 (2002), S. 212203

Döblinger,M.*; Wittmann,R.; Gerthsen,D.; Grushko,B.
Continuous transition between decagonal quasicrystal and approximant by formation and ordering of out-of-phase domains
Physical review B, 65 (2002), S. 224201-1 - 224201-9

Ebert,P.
Defects in III-V semiconductor surfaces
Applied physics letters, A 75 (2002), S. 101 - 112

Faley,M. I.; Poppe,U.; Urban,K.; Paulson,D. N.*; Starr,T. N.*; Fagaly,R. L.*
Sensitive HTS gradiometers for magnetic evalution applications
Physica C, (2002)

Faley,M.I.; Poppe,U.; Urban,K.; Paulson,D.N.*; Fagaly,R.L.*
Sensitive HTS gradiometers for magnetic evaluation applications
Physica C, 372-376 (2002), S. 217 - 220

Faley,M.I.; Poppe,U.; Urban,K.; Slobodchikov,V.Y.*; Maslennikov,Y. V.*; Gapelyuk,A.*; Sawitzki,B.*; Schirdewan,A.*
Operation of high-temperature superconductor magnetometer with submicrometer bicrystal junctions
Applied physics letters, 81 (2002), 13, S. 2406 - 2408

Franke,K. H.*; Sharma,H.R.*; Theis,W.*; Gille,P.*; Ebert,P.; Rieder,H.*
Quasicrystalline epitaxial monolayers grown on icosahedral Al-Pd-Mn and decagonal Al-Ni-Co quasicrystal surfaces
Physical review letters, 89 (2002), S. 156104-1 - 156104-4

Grushko,B. C.; Döblinger,M.*; Wittmann,R.*; Holland-Moritz,D.*
A study of high-Co Al-Ni-Co decagonal phase
Journal of alloys and compounds, 342 (2002), S. 30 - 34

Grushko,B.; Mi,S.; Highfield,J.G.*
A study of the Al-rich region of the Al-Ni-Mo alloy system
Journal of alloys and compounds, 334 (2002), S. 187-191

He,J.Q.; Regnery,S.*; Jia,C.L.; Qin,Y.L.*; Fetsilis,F.*; Erhardt,P.; Waser,R.; Urban,K.; Wang,R.H.*
Interfacial and microstructural properties of SrTiO3 thin films grown on Si(001)
Journal of applied physics, 92 (2002), S. 7200

Heggen,M.; Feuerbacher,M.; Lange,T.; Urban,K.
Microstructural analysis of plastically deformed icosahedral Zn-Mg-Dy single quasicrystals
Journal of alloys and compounds, 342 (2002), S. 330 - 336

Herzog,H.-J.*; Hackbarth,T.*; Seiler,U.*; König,U.*; Holländer,B.; Mantl,S.
Si/SiGe n-MOSFETs on thin SiGe virtual substrates prepared by means of implantation
IEEE electron device letters, 23 (2002), S. 485

Houben,L.; Scholten,C.; Luysberg,M.; Vetterl,O.; Finger,F.; Carius,R.
Growth of microcrystalline nip Si solar cells : role of local epitaxy
Journal of non-crystalline solids, 299 (2002), S. 1189 - 1193

Jia,C.L.; Rodriguez - Contreras,J.*; Poppe,U.; Kohlstedt,H.*; Waser,R.; Urban,K.
Lattice strain and lattice expansion of the SrRuO3 layers in SrRuO3/PbTr0.52Ti0.48O3/SrRuO3 multilayers thin films
Journal of applied physics, 92 (2002), 1, S. 101

Jiang,C.S.*; Yu,H.*; Shih,C.K.*; Ebert,P.
Effect of the substrate structure on the growth of two-dimensional thin Ag films
Surface science, 518 (2002), S. 63 - 71

Jiang,X.*; Jia,C. L.
Structure and defects of vapor-phase-grown diamond nanocrystals
Applied physics letters, 80 (2002), S. 2269

Jiang,X.*; Jia,C.L.; Szyszka,B.*
Manufacture of specific structure of aluminium-doped zinc oxide films by pattering the substrate surface
Applied physics letters, 80 (2002), S. 3090

Jäger,N.D.; Ebert,P.; Urban,K.; Krause-Rehberg,R.*; Weber,E.R.*
Scanning tunneling microscopy and spectroscopy of semiinsulating GaAs
Physical review B, 65 (2002), S. 195318-1 - 195318-8

Jäger,N.D.; Urban,K.; Weber,E.R.*; Ebert,P.
Dopant atom clustering and charge screening induced roughness of electronic interfaces in GaAs p-n multilayers
Physical review B, 65 (2002), S. 235302-1 - 235302-4

Kluge,F.; Yurechko,M.; Urban,K.; Ebert,P.
Influence of growth kinetics and chemical composition on the shape of voids in quasicrystals
Surface science, 519 (2002), S. 33 - 39

Krause,H.J.*; Wolf,W.*; Glaas,W.*; Zimmermann,E.*; Faley,M.I.; Sawade,G.*; Mattheus,R.*; Neudert,G.*; Gampe,U.*; Krieger,J.*
Squid array for magnetic inspection of prestressed concrete bridges
Physica C, 368 (2002), 1-4, S. 91 - 95

Lentzen,M.; Jahnen,B.; Jia,C.L.; Thust,A.; Tillmann,K.; Urban,K.
High-resolution imaging with an aberration-corrected transmission electron microscope
Ultramicroscopy, 92 (2002), S. 233 - 242

Luysberg,M.; Kirch,D.; Trinkaus,H.; Holländer,B.; Lenk,St.; Mantl,S.; Herzog,H.-J.*; Hackbarth,T.*; Fichtner,P.F.P.*
Effect of helium ion implantation and annealing on the relaxation behaviour of pseudomorphic Si1-xGex/Si(100) buffer layers on Si (100) substrates
Journal of applied physics, 92 (2002), S. 4290 - 4295

Luysberg,M.; Kirch,D.; Trinkaus,H.; Holländer,B.; Lenk,St.; Mantl,S.; Herzog,H.-J.*; Hackbarth,T.*; Fichtner,P.F.P.*
Effect og helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1-xGex buffer layers on Si (100) substrates
Journal of applied physics, 92 (2002), 8

Messerschmidt,U.*; Petukhov,B.V.*; Bartsch,M.*; Dietzsch,Ch.*; Geyer,B.*; Häussler,L.*; Ledig,L.*; Feuerbacher,M.; Schall,P.; Urban,K.
Dislocation mobility versus dislocation substructure controlled deformation of icosahedral Al-Pd-Mn single quasicrystals
Materials science and engineering A, 319-321 (2002), S. 107

Qin,Y. L.; Jia,C. L.; Urban,K.; Liedtke,R.; Waser,R.
Structural and morphologic evolution of Pt/B007 Sra3 TiO3/Pt capacitors with annealing processes
Applied physics letters, (2002)

Qin,Y.L.; Jia,C.L.; Urban,K.; Liedtke,R.*; Waser,R.
Structural and morphologic evolution of Pt/Ba0.7Sr.0.3TiO3/Pt capacitors with annealing processes
Applied physics letters, 80 (2002), S. 2728 - 2730

Shadrin,P. M.; Jia,C. L.; Divin,Y. Y.
Spread of critical currents in thin-film YBa2Cu3O7-X bicrystal junctions and faceting of grain boundary
Physica C, (2002)

Shadrin,P.*; Jia,C.L.; Divin,Y.
Spread of critical currents in thin-film YBa2Cu3O7-x bycrystal junctions and faceting of grain boundary
Physica C, 372-376 (2002), S. 80 - 82

Shirotov,V. V.; Divin,Y. Y.; Urban,K.
Far-infrared broadband measurements with Hilbert-transform spectroscopy
Physica C, (2002)

Shirotov,V.V.*; Divin,Y.Y.; Urban,K.
Far-infrared broadband measurements with Hilbert spectroscopy
Physica C, 372-376 (2002), S. 454 - 456

Tillmann,K.; Luysberg,M.; Specht,P.*; Weber,E.R.*
Direct compositional analysis of AlGaAs/GaAs heterostructures by the reciprocal space egmentation of high-resolution micrographs
Ultramicroscopy, 93 (2002), S. 123 - 137

Urban,K.; Feuerbacher,M.; Klein,H.
Plasticity of quasicrystalline alloys and their crystalline intermetallix approximants
Radiation effects and defects in solids, 157 (2002), S. 137 - 144

Weidner,E.*; Lei,J. L.; Frey,F.*; Wang,R.*; Grushko,B.
Diffuse scattering in decagonal Al-Ni-Fe
Journal of alloys and compounds, 342 (2002), S. 156 - 158

Wu,J.S.; Jia,C.L.; Urban,K.; Hao,J. H.*; Xi,X. X.*
A new mechanism for misfit dislocation generation : superdislocations associated with Ruddlesden-Popper planar defects
Journal of crystal growth, 234 (2002), S. 603 - 609

Yang,W.*; Feuerbacher,M.; Urban,K.
Cluster structure and low-energy planes in icosahedral Al-Pd-Mn quasicrystals
Journal of alloys and compounds, 342 (2002), S. 164

Yao,Yu.*; Ebert,P.; Li,M.*; Zhang,Zh.*; Wang,E.G.*
Decay characteristics of two-dimensional islands on strongly anisotropic surfaces
Physical review B, 66 (2002), S. 041407-1 - 041407-4

Yu,H.*; Jiang,C.S.*; Ebert,P.; Shilh,C.K.*
Probing the step structure of buried metal/semiconductor interfaces using quantized electron states: the case of Pb on Si(111)6x6-Au
Applied physics letters, 81 (2002), S. 2005 - 2007

Yu,H.*; Jiang,C.S.*; Ebert,P.; Wang,X.D.*; White,J.M.*; Niu,Q.*; Zhang,Zh.*; Shih,C.K.*
Quantitative determination of the metastability of flat Ag overlayers on GaAs(110)
Physical review letters, 88 (2002), S. 016102-1 - 016102-4

Yurechko,M.; Grushko,B.; Velikanova,T.*; Urban,K.
Isothermal sections of the Al-Pd-Co alloy system for 50-100 at.% Al
Journal of alloys and compounds, 337 (2002), S. 172 - 181
 

Book chapter

Faley,M.I.; Poppe,U.; Urban,K.; Slobodchikov,V.Y.*; Maslennikov,Y. V.*; Gapelyuk,A.*; Sawitzki,B.*; Schirdewan,A.*
Sensitive HTS dc-SQUID system for biomagnetic measurements
Proceedings of the 13th International Conference on Biomagnetism / ed.: H.Nowak ... - VDE, Berlin, 2002. - S. 925 - 927

Jäger,N.D.; Urban,K.; Weber,E.R.*; Ebert,P.
Roughness of electronic interfaces in GaAs p-n multilayers investigated by crossectional scanning tunneling microscopy
Proceedings of the Materials Research Society Spring Meeting, Symposium F : Defect and Impurity Engeneered Semiconductors and Devices III ; F12.4 - F12.4.6 April 1-5 / ed.: S.Ashok ... - San Francisco. - 719 (2002)

Klein,S.; Finger,F.; Carius,R.; Rech,B.; Luysberg,M.; Stutzmann,M.*
High efficiency thin film solar cells with intrinsic microcrystalline silicon by hot-wire CVD
Materials Research Society Symposium proceedings. - 715 (2002). - S. A26.2

Luysberg,M.; Kirch,D.; Trinkaus,H.; Holländer,B.; Lenk,St.; Mantl,S.; Herzog,H.-J.*; Hackbarth,T.*; Fichtner,P.F.P.*
Effect of helium ion implantation and annealing on the relaxation behaviour of pseudomorphic Si1-xGex/Si(100) buffer layers on Si (100) substrates
Institute of Physics conference series. - 169 (2001). - S. 181

Tillmann,K.; Luysberg,M.; Specht,P.*; Weber,E.R.*
Dopant induced stabilization of LT-grown AlAs/GaAs:Be MQWs against thermally activated Al-Ga intermixing
Proceedings of the 15th International Congress on Electron Microscopy / ed.: R.Cross. - Microscopy Society of Southern Africa. - 1 (2002). - S. 122 - 123

Urban,K.; Feuerbacher,M.; Wollgarten,M.
Mechanical properties of quasicrystals
Quasicrystals : an introduction to structure physical proberties and applications / ed.: J.B.Suck ... - Springer, 2002. - (Materials science series). - S.305

Wollgarten,M.; Franz,V.; Feuerbacher,M.; Urban,K.
Defects
Quasicrystals : an introduction to structure physical properties and applications / ed.: J. B. Suck ... - Springer, 2002. - (Materials science series). - S. 305

Yurechko,M.V.; Velikanova,T.Ya.*; Grushko,B. C.
New ternary phases in the Al-Pd-Co systems.
Repords of the National Academy of Sciences of Ukraine
Reports of the National Academy of Sciences of Ukraine. - 4 (2002). - S. 168 - 172
 

Invited talks

Baier,F.*; Müller,M.A.*; Sprengel,W.*; Grushko,B.; Strertzel,W.*; Assmus,W.*; Schäfer,H.E.*
Atomic defects in Al-Pd-Mn : a study by means of positron annihilation spectroscopy
12th International Conference on Positron Annihilation
München: 06.08.2000 - 12.08.2000

Divin,Y.Y.; Volkov,O.Y.*; Liatti,M. V.; Gubankov,V. N.*
Spectral range of the ac Josephson effect in (100)-tilt YBa2Cu3O7-x bicrystal junctions
Applied Superconductivity Conference ASC 2002
Houston, Texas: 04.09.2002 - 09.09.2002

Ebert,P.
Atomic scale solid state research using scanning tunneling microscopy
Condensed Matter Seminar : University of Texas ; Prof.Dr.C.K.Shih
Austin, Texas: 15.01.2002

Ebert,P.
From nanostructures to atoms : imaging and measurement methods
Seminar : Institut d'Electronique et de Microelectronique du Nord
Villeneuve d'Ascq, France: 20.06.2002

Ebert,P.; Domke,C.; Urban,K.
Nachweis elektrischer Ladungen und Versetzungen in GaAs mittels Querschnittsrastertunnelmikroskopie
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Regensburg: 11.03.2002 - 15.03.2002

Feuerbacher,M.
Mechanical properties of large-unit cell intermatallic compounds
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Regensburg: 10.03.2002 - 15.03.2002

Feuerbacher,M.
Plasticity of quasicrystals and complex intermetallics
Internationale Konferenz : RQ 11
Oxford, GB: 25.08.2002 - 30.08.2002

Franke,K. J.*; Sharma,H.R.*; Theis,W.*; Gille,P.*; Ebert,P.; Rieder,K.H.*
Quasikristalline Sb und Bi Monolagen auf quasikristallinen Oberflächen
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Regensburg: 11.03.2002 - 15.03.2002

Houben,L.; Luysberg,M.; Brammer,T.*
Holographische Abbildung von Korngrenzen in Silizium in der Transmissionselektronenmikroskopie
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Regensburg: 10.03.2002 - 15.03.2002

Hüging,N.; Tillmann,K.; Trinkaus,H.; Urban,K.; Holländer,B.; Mantl,S.; Fichtner,P.*; Luysberg,M.
Quantitative TEM analysis on the pressure of helium filled nano-cracks in implanted silicon
Proceedings of the 15th International Congress on Electron Microscopy / ed.: R.Cross. - Microscopy Society of Southern Africa. - 1 (2002). - S. 99 - 100

Jahnen,B.; Luysberg,M.
Interdiffusion in GaSb/AlGaSb heterostructures
15th International Congress on Electron Microscopy
Durban, South Africa: 01.09.2002 - 06.09.2002

Jia,C.L.
Engineering and characterization of the interfaces in electronceramic thin film systems
Euro Conference on Structure and Composition of Interfaces in Solids
Kloster Irsee: 18.08.2002 - 23.08.2002

Jäger,N.-D.; Urban,K.; Weber,E.R.*; Ebert,P.
Dopant atom clustering and charge screening induced roughness of electronic interfaces in GaAs p-n multilayer.
29th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-29)
Santa Fe, New Mexico: 06.01.2002 - 10.01.2002

Jäger,N.D.; Urban,K.; Weber,E.R.*; Ebert,P.
Rauhigkeit an elektronischen p-n Übergängen
Frühjahrstagung der Deutschen Physikalischen Gesellschaft.
Regensburg: 11.03.2002 - 15.03.2002

Jäger,N.D.; Urban,K.; Weber,E.R.*; Ebert,P.
The importance of screening and clustering of dopant atoms in the roughness of electronic interfaces in p-n interfaces in GaAs
Materials Research Society Spring Meeting
San Francisco: 01.04.2002 - 06.04.2002

Klein,S.; Finger,F.; Carius,R.; Rech,B.; Stutzmann,M.*
High efficiency thin film solar cells with intrinsic microcrystalline silicon by hot wire CVD
Materials Research Society Spring Meeting 2002
San Francisco, USA: 02.04.2002 - 05.04.2002

Luysberg,M.; Hüging,N.; Tillmann,K.; Trinkaus,H.; Urban,K.; Holländer,B.; Mantl,S.; Fichtner,P.*
Quantitative TEM analysis on the pressure of helium filled nano.cracks in implanted Si
15th International Congress on Electron Microscopy
Durban, South Africa: 01.09.2002 - 06.09.2002

Luysberg,M.; Kirch,D.; Holländer,B.; Mantl,S.; Lenk,St.; Trinkaus,H.; Hackbarth,Th.*; Herzog,H. J.*; Fichtner,P.*
Strain relaxation of He implanted, pseudomorphic Si1-xGex layers on Si(100)
15th International Congress on Electron Microscopy
Durban, South Africa : 01.09.2002 - 06.09.2002

Luysberg,M.; Kirch,D.; Holländer,D.; Mantl,S.; Lenk,St.; Trinkaus,H.; Hackbarth,Th.*; Herzog,H.-J.*; Fichtner,P.*
Strain relaxation of He implanted, pseudomorphic Si1-xGex layers on Si(100)
Proceedings of the 15th International Congress on Electron Microscopy / ed.: R.Cross. - Microscopy Society of Southern Africa. - 1 (2002). - S. 61

Theis,W.*; Franke,J. K.*; Kury,P.*; Horn-von-Hoegen,M.*; Gille,P.*; Ebert,P.; Rieder,K.H.*
Surfaces of quasicrystals : morphology, epitaxy, and phase transitions
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Regensburg: 11.03.2002 - 15.03.2002

Tillmann,K.; Luysberg,M.; Specht,P.*; Cich,M.*; Weber,E.R.*
Berryllium dopant induced stabilization against intermixing and precipitation upon annealing of LT/AlAs/GaAs :be multiple quantum wells
3rd Symposium on Non-Stoichiometric III-V Compounds.
Erlangen: 08.10.2001 - 10.10.2001

Tillmann,K.; Luysberg,M.; Specht,P.*; Weber,E.R.*
Dopant induced stabilization of LT-grown Al/As/GaAs:Be MQWs against thermally activated Al-Ga intermixing
15th International Congress on Electron Microscopy ICEM
Durban, Southern Africa: 01.09.2002 - 06.09.2002

Tillmann,K.; Luysberg,M.; Specht,P.*; Weber,E.R.*
Mechanism of interdiffusion and thermal stability upon annealing of AlAs/GaAs:Be quantum wells grown under low temperature conditions.
Institute of Physics Conference : Oxford University
Oxford: 25.03.2001 - 29.03.2001
 

Other talks

Ebert,P.
Atome sehen mit dem Rastertunnelmikroskop
Bild der Wissenschaft - Forschungscamp : Wissenschaft zum Anfassen für Jugendliche ; Forschungszentrum Jülich
Jülich: 01.04.2002 - 06.04.2002

Ebert,P.; Kreibig,U.*; Mantl,S.; Michely,Th.*; Urban,K.; von Plessen,G.*; Wuttig,M.*
Neue Materialien : vom physikalischen Konzept zur Anwendung
Seminar an der RWTH Aachen : Sommersemester 2002

Luysberg,M.
He implantation in SiGe/Si heterostructures : formation and interaction of defects.
Max-Planck Institut für Mikrostrukturphysik, Halle : invited by P.Werner
Halle
 

Posters

Faley,M.I.; Poppe,U.; Urban,K.; Slobodchikov,V.Y.*; Maslennikov,Y. V.*; Gapelyuk,A.*; Sawitzki,B.*; Schirdewan,A.*
Sensitive HTS dc-SQUID system for biomagnetic measurements
Biomag 2002 : 13th International Conference on Biomagnetism
Jena, Germany: 10.08.2002 - 14.08.2002

Jäger,N.-D.; Urban,K.; Weber,E.R.*; Ebert,P.
Dopant atom clustering and charge screening induced roughness of electronic interfaces in GaAs p-n multilayer
29th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-29)
Santa Fe, New Mexico: 06.01.2002 - 10.01.2002

Semmler,U.; Ebert,P.; Urban,K.
Quantifizierung der Bildung von Leerstellen aus (110)-Oberflächen von III-V-Halbleitern
Frühjahrstagung der Deutschen Physikalischen Gesellschaft
Regensburg: 11.03.2002 - 15.03.2002

Shirotov,V.*; Divin,Y.; Poppe,U.; Larue,H.*; Zimmermann,E.*; Ahmet,A.*; Halling,H.*; Urban,K.
Application of Hilbert spectroscopy to pulsed far-infrared radiation
Applied Superconductivity Conference
Houston / Texas: 04.09.2002 - 09.09.2002
 

Patents granted

Faley M.I.; Poppe U., Jia C.L.;
Layered arrangement and component containing the latter
US 6,353,234 B1 (Mar. 5, 2002)
DE 196 34 118 A1 (23.08.1996)
PT 1.1387
 
Patents applied for

Zimmermann E.1; Poppe U.2; ; Faley M.2; Halling H.1
1ZEL
2IFF
Magnetic flux sensor with a loop-shaped magnetic field conductor, and the production thereof
DE19915226
EP1166139 (02.01.2002)
WO0060370
PCT/DE00/00962
PT 1.1674 PCT