F. Fitsilis, S. Regnery¹, P. Ehrhart
¹AIXTRON AG, Aachen

(BaXSrl-x)TiO3. (BST), is one of the prime candidates as a high-k-dielectric in integrated high-density capacitors for future multi-GBit DRAM memory cells as well as for dielectric tuneable devices and remarkable progress has been achieved in the metal-organic chemical vapor deposition (MOCVD) of thin BST films on a laboratory scale. We report on the performance of a planetary multi-wafer reactor which offers, due to batch mode processing, a high throughput and a low cost of ownership as a production tool. Film growth is discussed within a wide parameter field and the fina1ly achieved electrical properties, e.g., permittivity, loss tangent, leakage current, are discussed in relation to the microstructural properties.