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@ARTICLE{Winden:136519,
      author       = {Winden, Andreas and Mikulics, Martin and Stoica, Toma and
                      von der Ahe, Martina and Mussler, Gregor and Haab, Anna and
                      Grützmacher, Detlev and Hardtdegen, Hilde},
      title        = {{S}ite-controlled growth of indium nitride based
                      nanostructures using metalorganic vapour phase epitaxy},
      journal      = {Journal of crystal growth},
      volume       = {370},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2013-03315},
      pages        = {336 - 341},
      year         = {2013},
      abstract     = {In this paper we report on studies on how to obtain
                      selective area growth of indium nitride nanostructures on
                      patterned SiO2/GaN(0 0 0 1)/c-plane α-Alα-Al2O3 substrates
                      by means of metalorganic vapour phase epitaxy (MOVPE) for
                      very small pattern filling factors. To this end we
                      investigated the impact of growth parameters such as
                      substrate temperature and the group V/group III molar flow
                      ratio (V/III ratio) on nanostructure morphology and on
                      selectivity. Furthermore we examined the evolution of InN
                      nanostructure growth in 100 nm apertures and the influence
                      of growth stage on the nanostructure's optical
                      characteristics. We found a narrow growth parameter range in
                      which both the reproducible selective growth of InN inside
                      the circular apertures and the parasitic nucleation on the
                      mask were concurrently kept under control. Under these
                      optimized growth conditions we obtained regular, hexagonally
                      shaped nanopyramids which evolved from coalesced nucleation
                      seeds via cauldron-like structures. A systematic study of
                      the nanostructure evolution reveals that the near band edge
                      luminescence depends on the nanostructure growth stage,
                      which is assigned to different strain states and to defect
                      induced free carriers as the InN nanopyramids grow.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000317271000074},
      doi          = {10.1016/j.jcrysgro.2012.08.034},
      url          = {https://juser.fz-juelich.de/record/136519},
}