%0 Journal Article
%A Soni, R.
%A Meuffels, P.
%A Petraru, A.
%A Vavra, O.
%A Kohlstedt, H.
%T Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes
%J Journal of applied physics
%V 113
%N 12
%@ 0021-8979
%C Melville, NY
%I American Institute of Physics
%M FZJ-2013-03663
%P 124504 -
%D 2013
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000316967800056
%R 10.1063/1.4797488
%U https://juser.fz-juelich.de/record/137195