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| Hauptseite > Publikationsdatenbank > Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes > print |
| Hauptseite > Publikationsdatenbank > Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes > print |
| 001 | 137195 | ||
| 005 | 20210129211939.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4797488 |2 doi |
| 024 | 7 | _ | |a 0021-8979 |2 ISSN |
| 024 | 7 | _ | |a 1089-7550 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2013-03663 |
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| 100 | 1 | _ | |a Soni, R. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes |
| 260 | _ | _ | |a Melville, NY |c 2013 |b American Institute of Physics |
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| 773 | _ | _ | |a 10.1063/1.4797488 |g Vol. 113, no. 12, p. 124504 - |0 PERI:(DE-600)1476463-5 |n 12 |p 124504 - |t Journal of applied physics |v 113 |y 2013 |x 0021-8979 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/137195/files/FZJ-2013-03663.pdf |y OpenAccess |z Published final document. |
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