Hauptseite > Publikationsdatenbank > LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces > print

001     137299
005     20210129212000.0
024 7 _ |a 10.1038/ncomms3351
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037 _ _ |a FZJ-2013-03754
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100 1 _ |a Warusawithana, M. P.
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245 _ _ |a LaAlO3 stoichiometry is key to electron liquid formation at LaAlO3/SrTiO3 interfaces
260 _ _ |a London
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520 _ _ |a Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron liquid (2-DEL) at the interface between the insulators lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3) distinguish this rich system from conventional 2D electron gases at compound semiconductor interfaces. The origin of this 2-DEL, however, is highly debated, with focus on the role of defects in the SrTiO3, while the LaAlO3 has been assumed perfect. Here we demonstrate, through experiments and first-principle calculations, that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAlO3 results in a 2-DEL. Although extrinsic defects, including oxygen deficiency, are known to render LaAlO3/SrTiO3 samples conducting, our results show that in the absence of such extrinsic defects an interface 2-DEL can form. Its origin is consistent with an intrinsic electronic reconstruction occurring to counteract a polarization catastrophe. This work provides insight for identifying other interfaces where emergent behaviours await discovery.
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700 1 _ |a Richter, C.
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700 1 _ |a Mundy, J. A.
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700 1 _ |a Roy, P.
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700 1 _ |a Paetel, S.
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700 1 _ |a Heeg, T.
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700 1 _ |a Pawlicki, A. A.
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700 1 _ |a Zheng, M.
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700 1 _ |a Mulcahy, B.
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700 1 _ |a Zander, Willi
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700 1 _ |a Zhu, Y.
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700 1 _ |a Eckstein, J. N.
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700 1 _ |a Muller, D. A.
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700 1 _ |a Hellberg, C. Stephen
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700 1 _ |a Mannhart, J.
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700 1 _ |a Schlom, D. G.
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773 _ _ |a 10.1038/ncomms3351
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