%0 Journal Article
%A Yang, Shu
%A Huang, Sen
%A Schnee, Michael
%A Zhao, Qing-Tai
%A Schubert, Jürgen
%A Chen, Kevin J.
%T Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
%J Japanese journal of applied physics
%V 52
%@ 1347-4065
%C Tokyo
%I Inst. of Pure and Applied Physics
%M FZJ-2013-04433
%P 08JN02 -
%D 2013
%X In this work, enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-κ LaLuO3 (LLO) gate dielectric were fabricated by deploying the CF4 plasma treatment technique in a gate-dielectric-first planar process. CF4 plasma treatment can shift the threshold voltage from -2.3 V [for depletion-mode (D-mode) LLO MIS-HEMTs] to 0.6 V (for E-mode LLO MIS-HEMTs). Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results suggest that fluorine ions could penetrate through the polycrystalline/amorphous LLO film and be implanted into the (Al)GaN barrier layer. The primary threshold voltage (VTH) shift mechanism of the E-mode LLO MIS-HEMTs is the negatively-charged fluorine ions in (Al)GaN, while fluorine atoms form chemical bonds with La/Lu atoms in the fluorinated LLO film. The E-mode LLO MIS-HEMTs exhibit a drive drain current density of 352 mA/mm at VGS = 2.5 V and a peak transconductance (Gm) of ∼193 mS/mm. Significant suppression of current collapse and low dynamic ON-resistance are obtained in the E-mode LLO MIS-HEMTs under high-drain-bias switching conditions.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000323883100163
%R 10.7567/JJAP.52.08JN02
%U https://juser.fz-juelich.de/record/138276