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000138276 037__ $$aFZJ-2013-04433
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000138276 1001_ $$0P:(DE-HGF)0$$aYang, Shu$$b0$$eCorresponding author
000138276 245__ $$aEnhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation
000138276 260__ $$aTokyo$$bInst. of Pure and Applied Physics$$c2013
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000138276 520__ $$aIn this work, enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-κ LaLuO3 (LLO) gate dielectric were fabricated by deploying the CF4 plasma treatment technique in a gate-dielectric-first planar process. CF4 plasma treatment can shift the threshold voltage from -2.3 V [for depletion-mode (D-mode) LLO MIS-HEMTs] to 0.6 V (for E-mode LLO MIS-HEMTs). Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results suggest that fluorine ions could penetrate through the polycrystalline/amorphous LLO film and be implanted into the (Al)GaN barrier layer. The primary threshold voltage (VTH) shift mechanism of the E-mode LLO MIS-HEMTs is the negatively-charged fluorine ions in (Al)GaN, while fluorine atoms form chemical bonds with La/Lu atoms in the fluorinated LLO film. The E-mode LLO MIS-HEMTs exhibit a drive drain current density of 352 mA/mm at VGS = 2.5 V and a peak transconductance (Gm) of ∼193 mS/mm. Significant suppression of current collapse and low dynamic ON-resistance are obtained in the E-mode LLO MIS-HEMTs under high-drain-bias switching conditions.
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000138276 7001_ $$0P:(DE-HGF)0$$aHuang, Sen$$b1
000138276 7001_ $$0P:(DE-Juel1)139578$$aSchnee, Michael$$b2$$ufzj
000138276 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b3$$ufzj
000138276 7001_ $$0P:(DE-Juel1)128631$$aSchubert, Jürgen$$b4$$ufzj
000138276 7001_ $$0P:(DE-HGF)0$$aChen, Kevin J.$$b5
000138276 773__ $$0PERI:(DE-600)2006801-3$$a10.7567/JJAP.52.08JN02$$gVol. 52, p. 08JN02 -$$p08JN02 -$$tJapanese journal of applied physics$$v52$$x1347-4065$$y2013
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