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@ARTICLE{Yang:138276,
      author       = {Yang, Shu and Huang, Sen and Schnee, Michael and Zhao,
                      Qing-Tai and Schubert, Jürgen and Chen, Kevin J.},
      title        = {{E}nhancement-{M}ode {L}a{L}u{O}3–{A}l{G}a{N}/{G}a{N}
                      {M}etal–{I}nsulator–{S}emiconductor
                      {H}igh-{E}lectron-{M}obility {T}ransistors {U}sing
                      {F}luorine {P}lasma {I}on {I}mplantation},
      journal      = {Japanese journal of applied physics},
      volume       = {52},
      issn         = {1347-4065},
      address      = {Tokyo},
      publisher    = {Inst. of Pure and Applied Physics},
      reportid     = {FZJ-2013-04433},
      pages        = {08JN02 -},
      year         = {2013},
      abstract     = {In this work, enhancement-mode (E-mode) AlGaN/GaN
                      metal–insulator–semiconductor high-electron-mobility
                      transistors (MIS-HEMTs) with high-κ LaLuO3 (LLO) gate
                      dielectric were fabricated by deploying the CF4 plasma
                      treatment technique in a gate-dielectric-first planar
                      process. CF4 plasma treatment can shift the threshold
                      voltage from -2.3 V [for depletion-mode (D-mode) LLO
                      MIS-HEMTs] to 0.6 V (for E-mode LLO MIS-HEMTs). Transmission
                      electron microscopy (TEM) and X-ray photoelectron
                      spectroscopy (XPS) results suggest that fluorine ions could
                      penetrate through the polycrystalline/amorphous LLO film and
                      be implanted into the (Al)GaN barrier layer. The primary
                      threshold voltage (VTH) shift mechanism of the E-mode LLO
                      MIS-HEMTs is the negatively-charged fluorine ions in
                      (Al)GaN, while fluorine atoms form chemical bonds with La/Lu
                      atoms in the fluorinated LLO film. The E-mode LLO MIS-HEMTs
                      exhibit a drive drain current density of 352 mA/mm at VGS =
                      2.5 V and a peak transconductance (Gm) of ∼193 mS/mm.
                      Significant suppression of current collapse and low dynamic
                      ON-resistance are obtained in the E-mode LLO MIS-HEMTs under
                      high-drain-bias switching conditions.},
      cin          = {PGI-9 / JARA-FIT / PGI-6},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)VDB881 /
                      I:(DE-Juel1)PGI-6-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000323883100163},
      doi          = {10.7567/JJAP.52.08JN02},
      url          = {https://juser.fz-juelich.de/record/138276},
}