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| Home > Publications database > Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation > print |
| 001 | 138276 | ||
| 005 | 20210129212210.0 | ||
| 024 | 7 | _ | |a 10.7567/JJAP.52.08JN02 |2 doi |
| 024 | 7 | _ | |a 1347-4065 |2 ISSN |
| 024 | 7 | _ | |a 0021-4922 |2 ISSN |
| 024 | 7 | _ | |a WOS:000323883100163 |2 WOS |
| 037 | _ | _ | |a FZJ-2013-04433 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Yang, Shu |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation |
| 260 | _ | _ | |a Tokyo |c 2013 |b Inst. of Pure and Applied Physics |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1392303405_25156 |2 PUB:(DE-HGF) |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a In this work, enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-κ LaLuO3 (LLO) gate dielectric were fabricated by deploying the CF4 plasma treatment technique in a gate-dielectric-first planar process. CF4 plasma treatment can shift the threshold voltage from -2.3 V [for depletion-mode (D-mode) LLO MIS-HEMTs] to 0.6 V (for E-mode LLO MIS-HEMTs). Transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results suggest that fluorine ions could penetrate through the polycrystalline/amorphous LLO film and be implanted into the (Al)GaN barrier layer. The primary threshold voltage (VTH) shift mechanism of the E-mode LLO MIS-HEMTs is the negatively-charged fluorine ions in (Al)GaN, while fluorine atoms form chemical bonds with La/Lu atoms in the fluorinated LLO film. The E-mode LLO MIS-HEMTs exhibit a drive drain current density of 352 mA/mm at VGS = 2.5 V and a peak transconductance (Gm) of ∼193 mS/mm. Significant suppression of current collapse and low dynamic ON-resistance are obtained in the E-mode LLO MIS-HEMTs under high-drain-bias switching conditions. |
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| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Huang, Sen |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Schnee, Michael |0 P:(DE-Juel1)139578 |b 2 |u fzj |
| 700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 3 |u fzj |
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| 700 | 1 | _ | |a Chen, Kevin J. |0 P:(DE-HGF)0 |b 5 |
| 773 | _ | _ | |a 10.7567/JJAP.52.08JN02 |g Vol. 52, p. 08JN02 - |p 08JN02 - |0 PERI:(DE-600)2006801-3 |t Japanese journal of applied physics |v 52 |y 2013 |x 1347-4065 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/138276/files/FZJ-2013-04433.pdf |y Restricted |
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