000138708 001__ 138708
000138708 005__ 20210129212338.0
000138708 0247_ $$2doi$$a10.1088/0957-4484/24/40/405302
000138708 0247_ $$2ISSN$$a1361-6528
000138708 0247_ $$2ISSN$$a0957-4484
000138708 0247_ $$2WOS$$aWOS:000324516300008
000138708 037__ $$aFZJ-2013-04795
000138708 082__ $$a530
000138708 1001_ $$0P:(DE-Juel1)144014$$aWinden, A$$b0$$eCorresponding author$$ufzj
000138708 245__ $$aVertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range
000138708 260__ $$aBristol$$bIOP Publ.$$c2013
000138708 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1383817052_14100
000138708 3367_ $$2DataCite$$aOutput Types/Journal article
000138708 3367_ $$00$$2EndNote$$aJournal Article
000138708 3367_ $$2BibTeX$$aARTICLE
000138708 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000138708 3367_ $$2DRIVER$$aarticle
000138708 500__ $$3POF3_Assignment on 2016-02-29
000138708 520__ $$aImportant technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range.
000138708 536__ $$0G:(DE-HGF)POF2-421$$a421 - Frontiers of charge based Electronics (POF2-421)$$cPOF2-421$$fPOF II$$x0
000138708 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000138708 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M$$b1$$ufzj
000138708 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D$$b2$$ufzj
000138708 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H$$b3$$ufzj
000138708 773__ $$0PERI:(DE-600)1362365-5$$a10.1088/0957-4484/24/40/405302$$gVol. 24, no. 40, p. 405302 -$$n40$$p405302 -$$tNanotechnology$$v24$$x1361-6528$$y2013
000138708 8564_ $$uhttps://juser.fz-juelich.de/record/138708/files/FZJ-2013-04795.pdf$$yRestricted$$zPublished final document.
000138708 909CO $$ooai:juser.fz-juelich.de:138708$$pVDB
000138708 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144014$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000138708 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000138708 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000138708 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000138708 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000138708 9131_ $$0G:(DE-HGF)POF2-421$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vFrontiers of charge based Electronics$$x0
000138708 9141_ $$y2013
000138708 915__ $$0StatID:(DE-HGF)0010$$2StatID$$aJCR/ISI refereed
000138708 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000138708 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000138708 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000138708 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000138708 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000138708 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000138708 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000138708 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000138708 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000138708 915__ $$0StatID:(DE-HGF)1030$$2StatID$$aDBCoverage$$bCurrent Contents - Life Sciences
000138708 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000138708 920__ $$lyes
000138708 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000138708 980__ $$ajournal
000138708 980__ $$aVDB
000138708 980__ $$aUNRESTRICTED
000138708 980__ $$aI:(DE-Juel1)PGI-9-20110106