TY  - JOUR
AU  - Winden, A
AU  - Mikulics, M
AU  - Grützmacher, D
AU  - Hardtdegen, H
TI  - Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range
JO  - Nanotechnology
VL  - 24
IS  - 40
SN  - 1361-6528
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2013-04795
SP  - 405302 -
PY  - 2013
AB  - Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000324516300008
DO  - DOI:10.1088/0957-4484/24/40/405302
UR  - https://juser.fz-juelich.de/record/138708
ER  -