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@ARTICLE{Winden:138708,
      author       = {Winden, A and Mikulics, M and Grützmacher, D and
                      Hardtdegen, H},
      title        = {{V}ertically integrated ({G}a, {I}n){N} nanostructures for
                      future single photon emitters operating in the
                      telecommunication wavelength range},
      journal      = {Nanotechnology},
      volume       = {24},
      number       = {40},
      issn         = {1361-6528},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2013-04795},
      pages        = {405302 -},
      year         = {2013},
      abstract     = {Important technological steps are discussed and realized
                      for future room-temperature operation of III-nitride single
                      photon emitters. First, the growth technology of positioned
                      single pyramidal InN nanostructures capped by Mg-doped GaN
                      is presented. The optimization of their optical
                      characteristics towards narrowband emission in the
                      telecommunication wavelength range is demonstrated. In
                      addition, a device concept and technology was developed so
                      that the nanostructures became singularly addressable. It
                      was found that the nanopyramids emit in the
                      telecommunication wavelength range if their size is chosen
                      appropriately. A p-GaN contacting layer was successfully
                      produced as a cap to the InN pyramids and the top p-contact
                      was achievable using an intrinsically conductive polymer
                      PEDOT:PSS, allowing a $25\%$ increase in light transmittance
                      compared to standard Ni/Au contact technology. Single
                      nanopyramids were successfully integrated into a
                      high-frequency device layout. These decisive technology
                      steps provide a promising route to electrically driven and
                      room-temperature operating InN based single photon emitters
                      in the telecommunication wavelength range.},
      cin          = {PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000324516300008},
      doi          = {10.1088/0957-4484/24/40/405302},
      url          = {https://juser.fz-juelich.de/record/138708},
}