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000138711 1001_ $$0P:(DE-Juel1)144014$$aWinden, Andreas$$b0$$eCorresponding author$$ufzj
000138711 245__ $$aSpectral Sensitivity Tuning of Vertical InN Nanopyramid-Based Photodetectors
000138711 260__ $$aTokyo$$bInst. of Pure and Applied Physics$$c2013
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000138711 520__ $$aIn this paper, we report on the fabrication of InN nanopyramid-based photodetectors operating within the telecommunication wavelength range. We found that the spectral sensitivity of individually addressable InN nanopyramids can be tuned within an interval of 1550–1750 nm since the band edge luminescence energy correlates with the structure size. According to this, we optimized the nanopatterning technique of SiO2/GaN/sapphire substrates as well as the selective area growth to precisely control the nanostructure dimensions. Furthermore, we developed a technological process to contact InN nanopyramids and to integrate them into a high-frequency device layout. Thus, InN nanopyramid-based photodetectors exhibit a low RC constant, low dark currents below 1 nA, as well as a high responsivity of about 0.2 A/W at a wavelength of 1.55 µm.
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000138711 7001_ $$0P:(DE-Juel1)128613$$aMikulics, Martin$$b1$$ufzj
000138711 7001_ $$0P:(DE-Juel1)141986$$aHaab, Anna$$b2$$ufzj
000138711 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b3$$ufzj
000138711 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, Hilde$$b4$$ufzj
000138711 773__ $$0PERI:(DE-600)2006801-3$$a10.7567/JJAP.52.08JF05$$gVol. 52, p. 08JF05 -$$n8S$$p08JF05 $$tJapanese journal of applied physics$$v52$$x1347-4065$$y2013
000138711 8564_ $$zPublished final document.
000138711 8564_ $$uhttps://juser.fz-juelich.de/record/138711/files/FZJ-2013-04798_PV.pdf$$yRestricted$$zPublished final document.
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