TY  - JOUR
AU  - Sladek, Kamil
AU  - Haas, Fabian
AU  - Heidelmann,
AU  - Park, Daesung
AU  - Barthel, Juri
AU  - Dorn, Falk
AU  - Weirich, Thomas E.
AU  - Grützmacher, Detlev
AU  - Hardtdegen, Hilde
TI  - From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE
JO  - Journal of crystal growth
VL  - 370
SN  - 0022-0248
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2013-04799
SP  - 141 - 145
PY  - 2013
AB  - A methodology for the deposition of lateral InAs nanostructures on silicon by selective area metal organic vapor phase epitaxy (SA-MOVPE) is presented. Growth parameters which are optimal for the SA-MOVPE of conformal InAs overgrowth on GaAs nanowires were transferred to the lateral SA growth of InAs structures on patterned silicon substrates. The substrate pretreatment conditions and growth parameters were further optimized with respect to selectivity and nanostructure morphology. It is found that lateral growth of InAs nano structures can be achieved on patterned Si(110) as well as on patterned silicon on insulator (SOI) substrates. An investigation of the laterally grown InAs/Si nanowires' crystal structure revealed a faceted but nevertheless abrupt Si–InAs interface on the Si(110) substrate as well as relaxation and a high crystallinity of the deposited InAs on both Si template types. The morphology and crystallinity of laterally grown structures are discussed in detail and compared to that of vertical shell/core InAs/GaAs nanowires.
T2  - 16th International Conference on Metalorganic Vapor Phase Epitaxy
CY  - ,  ()
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000317271000031
DO  - DOI:10.1016/j.jcrysgro.2012.09.059
UR  - https://juser.fz-juelich.de/record/138712
ER  -