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@ARTICLE{Sladek:138712,
      author       = {Sladek, Kamil and Haas, Fabian and Heidelmann, and Park,
                      Daesung and Barthel, Juri and Dorn, Falk and Weirich, Thomas
                      E. and Grützmacher, Detlev and Hardtdegen, Hilde},
      title        = {{F}rom conformal overgrowth to lateral growth of indium
                      arsenide nano structures on silicon substrates by {MOVPE}},
      journal      = {Journal of crystal growth},
      volume       = {370},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2013-04799},
      pages        = {141 - 145},
      year         = {2013},
      abstract     = {A methodology for the deposition of lateral InAs
                      nanostructures on silicon by selective area metal organic
                      vapor phase epitaxy (SA-MOVPE) is presented. Growth
                      parameters which are optimal for the SA-MOVPE of conformal
                      InAs overgrowth on GaAs nanowires were transferred to the
                      lateral SA growth of InAs structures on patterned silicon
                      substrates. The substrate pretreatment conditions and growth
                      parameters were further optimized with respect to
                      selectivity and nanostructure morphology. It is found that
                      lateral growth of InAs nano structures can be achieved on
                      patterned Si(110) as well as on patterned silicon on
                      insulator (SOI) substrates. An investigation of the
                      laterally grown InAs/Si nanowires' crystal structure
                      revealed a faceted but nevertheless abrupt Si–InAs
                      interface on the Si(110) substrate as well as relaxation and
                      a high crystallinity of the deposited InAs on both Si
                      template types. The morphology and crystallinity of
                      laterally grown structures are discussed in detail and
                      compared to that of vertical shell/core InAs/GaAs
                      nanowires.},
      organization  = {16th International Conference on
                       Metalorganic Vapor Phase Epitaxy,},
      cin          = {PGI-9 / PGI-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421) /
                      424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-421 / G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000317271000031},
      doi          = {10.1016/j.jcrysgro.2012.09.059},
      url          = {https://juser.fz-juelich.de/record/138712},
}