Home > Publications database > Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires > print

001     138713
005     20210129212339.0
024 7 _ |a 10.1088/0957-4484/24/3/035203
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024 7 _ |a 1361-6528
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024 7 _ |a 0957-4484
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037 _ _ |a FZJ-2013-04800
082 _ _ |a 530
100 1 _ |a Blömers, C
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245 _ _ |a Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires
260 _ _ |a Bristol
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336 7 _ |a Journal Article
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520 _ _ |a We investigated the transport properties of GaAs/InAs core/shell nanowires grown by molecular beam epitaxy. Owing to the band alignment between GaAs and InAs, electrons are accumulated in the InAs shell as long as the shell thickness exceeds 12 nm. By performing simulations using a Schrödinger–Poisson solver, it is confirmed that confined states are present in the InAs shell, which are depleted if the shell thickness is below a threshold value. The existence of a tubular-shaped conductor is proved by performing magnetoconductance measurements at low temperatures. Here, flux periodic conductance oscillations are observed which can be attributed to transport in one-dimensional channels based on angular momentum states.
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700 1 _ |a Rieger, T
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700 1 _ |a Zellekens, P
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700 1 _ |a Haas, F
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700 1 _ |a Lepsa, M I
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700 1 _ |a Hardtdegen, H
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700 1 _ |a Gül, ö
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700 1 _ |a Demarina, Nataliya
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700 1 _ |a Grützmacher, D
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700 1 _ |a Lüth, H
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700 1 _ |a Schäpers, Thomas
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773 _ _ |a 10.1088/0957-4484/24/3/035203
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856 4 _ |z Published final document.
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