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@ARTICLE{Haab:138719,
      author       = {Haab, Anna and Mikulics, Martin and Winden, Andreas and
                      Voigt, Sally and von der Ahe, Martina and Moers, Jürgen and
                      Wirtz, Konrad and Stoica, Toma and Grützmacher, Detlev and
                      Hardtdegen, Hilde},
      title        = {{S}elf-assembled {G}a{N} nanostructures by dry etching and
                      their optical properties},
      journal      = {Physica status solidi / A},
      volume       = {209},
      number       = {3},
      issn         = {1862-6300},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2013-04806},
      pages        = {443 - 446},
      year         = {2012},
      abstract     = {The influence of process parameters and template
                      characteristics on the morphology and optical properties of
                      self-assembled nanostructures produced by dry etching from
                      GaN/sapphire templates was investigated. It was found that
                      the chemical component in the etching gas–chlorine
                      supports the formation of nanostructures and that a minimum
                      amount of RF and ICP power (i.e., energy) is necessary.
                      Additionally the crystalline imperfection and the doping
                      concentration of the template greatly affect the
                      nanostructure morphology. All nanostructures exhibit higher
                      luminescence intensity than the templates they are
                      fabricated from and exhibit a red-shift of the luminescence
                      with respect to the epilayer. The results indicate effective
                      strain relaxation as well as more efficient absorption of
                      the incoming photons the smaller the nanostructures become.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000303383900008},
      doi          = {10.1002/pssa.201100478},
      url          = {https://juser.fz-juelich.de/record/138719},
}