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@INPROCEEDINGS{Sladek:138720,
      author       = {Sladek, Kamil and Winden, Andreas and Wirths, Stephan and
                      Weis, Karl and Blömers, Christian and Gül, Önder and
                      Grap, Thomas and Lenk, Steffi and von der Ahe, Martina and
                      Weirich, Thomas E. and Hardtdegen, Hilde and Lepsa, Mihail
                      Ion and Lysov, Andrey and Li, Zi-An and Prost, Werner and
                      Tegude, Franz-Josef and Lüth, Hans and Schäpers, Thomas
                      and Grützmacher, Detlev},
      title        = {{C}omparison of {I}n{A}s nanowire conductivity: influence
                      of growth method and structure},
      journal      = {Physica status solidi / C},
      volume       = {9},
      number       = {2},
      issn         = {1862-6351},
      address      = {Berlin},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2013-04807},
      pages        = {230 - 234},
      year         = {2012},
      abstract     = {The conductivity and crystal structure of nominally undoped
                      InAs nanowires deposited by three different methods – 1.
                      selective area metal organic vapor phase epitaxy (SA MOVPE),
                      2. gold assisted vapor liquid solid (VLS) MOVPE and 3.
                      extrinsic catalyst free VLS molecular beam epitaxy (MBE) –
                      is investigated. The influence on conductivity by stacking
                      faults and different growth conditions is analyzed to
                      determine the main impact. It is found that in terms of
                      crystal structure, nanowires deposited by VLS MOVPE and VLS
                      MBE behave similarly showing a zinc blende (ZB) phase while
                      nanowires deposited by SA MOVPE feature a high density of
                      stacking faults and a tendency to higher amounts of wurtzite
                      (WZ) when grown with a decreased growth rate. However, the
                      conductivity of wires deposited by VLS MOVPE is found to be
                      much higher and statistically less dispersive compared to
                      the other two wire types. An electrical similarity between
                      nominally undoped wires in VLS MOVPE and previously reported
                      intentionally doped wires in SA MOVPE is observed and
                      discussed. (© 2012 WILEY-VCH Verlag GmbH $\&$ Co. KGaA,
                      Weinheim)},
      month         = {May},
      date          = {2011-05-22},
      organization  = {38th International Symposium on
                       Compound Semiconductors (ISCS), Berlin
                       (Germany), 22 May 2011 - 26 May 2011},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)16},
      UT           = {WOS:000301540900019},
      doi          = {10.1002/pssc.201100282},
      url          = {https://juser.fz-juelich.de/record/138720},
}