Hauptseite > Publikationsdatenbank > Comparison of InAs nanowire conductivity: influence of growth method and structure > print

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005     20210129212341.0
024 7 _ |a 10.1002/pssc.201100282
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024 7 _ |a 1610-1642
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100 1 _ |a Sladek, Kamil
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111 2 _ |a 38th International Symposium on Compound Semiconductors (ISCS)
|w Germany
|c Berlin
|d 2011-05-22 - 2011-05-26
|g ISCS
245 _ _ |a Comparison of InAs nanowire conductivity: influence of growth method and structure
260 _ _ |a Berlin
|c 2012
|b Wiley-VCH
300 _ _ |a 230-234
336 7 _ |a Contribution to a conference proceedings
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520 _ _ |a The conductivity and crystal structure of nominally undoped InAs nanowires deposited by three different methods – 1. selective area metal organic vapor phase epitaxy (SA MOVPE), 2. gold assisted vapor liquid solid (VLS) MOVPE and 3. extrinsic catalyst free VLS molecular beam epitaxy (MBE) – is investigated. The influence on conductivity by stacking faults and different growth conditions is analyzed to determine the main impact. It is found that in terms of crystal structure, nanowires deposited by VLS MOVPE and VLS MBE behave similarly showing a zinc blende (ZB) phase while nanowires deposited by SA MOVPE feature a high density of stacking faults and a tendency to higher amounts of wurtzite (WZ) when grown with a decreased growth rate. However, the conductivity of wires deposited by VLS MOVPE is found to be much higher and statistically less dispersive compared to the other two wire types. An electrical similarity between nominally undoped wires in VLS MOVPE and previously reported intentionally doped wires in SA MOVPE is observed and discussed. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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700 1 _ |a Wirths, Stephan
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773 _ _ |a 10.1002/pssc.201100282
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