%0 Journal Article
%A Mikulics, Martin
%A Adam, Roman
%A Sofer, Zdeněk
%A Hardtdegen, Hilde
%A Stanček, Stanislav
%A Knobbe, Jens
%A Kočan, Martin
%A Stejskal, Josef
%A Sedmidubský, David
%A Pavlovič, Márius
%A Nečas, Vladimír
%A Grützmacher, Detlev
%A Marso, Michel
%T Femtosecond and highly sensitive GaAs metal–semiconductor–metal photodetectors grown on aluminum mirrors/pseudo-substrates
%J Semiconductor science and technology
%V 25
%N 7
%@ 1361-6641
%C Bristol
%I IOP Publ.
%M FZJ-2013-04810
%P 075001 
%D 2010
%X In this study, ultrafast GaAs metal–semiconductor–metal (MSM) photodetectors grown on aluminum mirrors/pseudo-substrates were fabricated and tested. Surface characterization measurements revealed the good quality of the surface morphology, while x-ray diffraction measurements showed several crystallographic orientations of the GaAs layer. The material exhibited a 50 fs carrier lifetime due to growth-induced defects. The response of the photodetectors showed a full width at half maximum of 300 fs. These results demonstrate that the growth of GaAs layers on lattice-mismatched metallic substrates with high thermal conductivity is a promising approach for low-cost and large-area fabrication of electronic and ultrafast photonic devices that require a highly effective thermal drain.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000279319600001
%R 10.1088/0268-1242/25/7/075001
%U https://juser.fz-juelich.de/record/138723